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2SK3366

Part No 2SK3366
Manufacturer Renesas Electronics America
Catalog JFETs (Junction Field Effect)
Description SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE / Trans MOSFET N-CH 30V 20A 3-Pin(3+Tab) TO-251
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products
Family JFETs(Junction Field Effect)
Manufacturer Renesas Electronics America
Win Source Part Number 159962-2SK3366
Popularity Medium
Supply and Demand Status Balance
Family Name 2SK3366
Introduction Date August 27, 1999
ECCN EAR99
Estimated EOL Date 2023
Ultra Librarian 3D Model Ultra Librarian 2SK3366 CAD Model

Description

Product Overview: 2SK3366

This 2SK3366 MOSFET is an advanced semiconductor device engineered for enhanced efficiency and performance in various high-frequency applications. As an N-channel transistor, it presents a valuable solution for electronic designs requiring reliable power management and signal modulation.

Features and Benefits

  • Superior Switching Speed: Facilitates quicker response times in dynamic RF environments.
  • High Power Dissipation Capability: Supports efficient heat management, thus prolonging component life.
  • Low Electrical Noise: Enhances performance in analog and digital circuits requiring minimal interference.
  • Robust Construction: Ensures durability, ideal for rugged design scenarios and demanding circuits.

Applications

  • Antenna switch transistors in RF circuits
  • Signal amplifiers for audio and broadcasting equipment
  • Inverter circuits and energy management systems
  • High-efficiency power electronics

Additional Details

The 2SK3366 is renowned for its ability to maintain signal integrity at high-frequency ranges, making it dependable for telecommunications, broadcast, and computing applications. By adopting a low on-state resistance design, it addresses energy efficiency requirements in modern electronics, aiding in the reduction of power losses across systems.

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