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Same model may have multiple batches, images only for reference.
2SK1070PIETR-E Renesas Electronics America
Same model may have multiple batches, images only for reference.

2SK1070PIETR-E

Part No 2SK1070PIETR-E
Manufacturer Renesas Electronics America
Catalog JFETs (Junction Field Effect)
Description JFET N-CH MPAK
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Renesas Electronics America
Status Obsolete
Transistor Polarity N-Channel
Voltage - Breakdown (V(BR)GSS) 22V
Current - Drain (Idss) at Vds (Vgs=0) 12mA at 5V
Current Drain (Id) - Max 50mA
Voltage - Cutoff (VGS off) at Id 0V at 10μA
Input Capacitance (Ciss) (Maximum) at Vds 9pF at 5V
Maximum Power 150mW
Temperature Range - Operating 150°C
Mounting Style SMD
Manufacturer Package TO-236-3, SC-59, SOT-23-3
Supplier Device Package 3-MPAK
Manufacturer Pack Quantity 3,000
MSL Level 1 (Unlimited)
Win Source Part Number 728951-2SK1070PIETR-E
Popularity Low
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian 2SK1070PIETR-E CAD Model

Description

The Renesas Electronics America 2SK1070PIETR-E is an N-channel transistor.

  • Voltage Breakdown: 22V
  • Maximum Current Drain: 50mA
  • Maximum Power: 150mW
  • Input Capacitance: 9pF @ 5V
  • Operating Temperature: 150°C
  • Supplier Device Package: 3-MPAK
  • Popularity Rating: Low
  • Supply and Demand Status: Sufficient
  • Manufacturer Pack Quantity: 3,000
  • MSL Level: 1 (unlimited)

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