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SS0130UFN2B

Part No SS0130UFN2B
Manufacturer Panjit
Catalog OEM Parts ( S )
Description Surface Mount Schottky Barrier
Sample
Rohs State Need to verify
ECAD Module
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Win Source Part Number 1095988-SS0130UFN2B
Categories OEM Parts( S )
Manufacturer Panjit
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian SS0130UFN2B CAD Model

Description

The SS0130UFN2B is a Schottky Barrier Rectifier manufactured by Panjit. This diode is designed for high-efficiency rectification, featuring a low forward voltage drop and fast switching speed. It is commonly used in various power management and protection applications.

Applications:

  • DC-DC converters
  • Reverse polarity protection
  • Freewheeling diodes in inductive circuits
  • Switching mode power supplies (SMPS)
  • Solar panel junction boxes

Features:

  • Low forward voltage drop, minimizing power loss and improving efficiency.
  • Fast switching speed, suitable for high-frequency applications.
  • High surge current capability, providing robustness against transient voltage spikes.
  • Surface mount package, enabling compact and efficient PCB assembly.
  • RoHS compliant, ensuring environmental responsibility.

Benefits:

  • Improved energy efficiency in power conversion circuits.
  • Enhanced protection against reverse polarity and voltage transients.
  • Reduced heat generation due to low forward voltage drop.
  • Smaller PCB footprint compared to through-hole components.
  • Increased reliability and lifespan of electronic devices.

Additional Details:

The SS0130UFN2B typically comes in a SOD-323 or similar surface mount package. Its key electrical characteristics include a repetitive peak reverse voltage (VRRM) of 30V and a forward current (IF) of 1A. The forward voltage (VF) is typically around 0.4V at the rated forward current. It features a low reverse leakage current and is designed to operate within a specified temperature range. Its compact size and efficient performance make it suitable for a wide range of applications where space and power efficiency are critical.

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