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PJU3NA80_T0

Part No PJU3NA80_T0
Manufacturer Panjit
Catalog OEM Parts (O - R)
Sample
Rohs State Need to verify
ECAD Module
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Win Source Part Number 1085341-PJU3NA80_T0
Categories OEM Parts(O-R)
Manufacturer Panjit
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian PJU3NA80_T0 CAD Model

Description

The PJU3NA80_T0 is an N-Channel MOSFET manufactured by Panjit. This MOSFET is designed for high-voltage, high-efficiency switching applications. Its key characteristics include a high breakdown voltage and relatively low on-resistance, making it suitable for power supplies, motor control, and other power electronics applications.

Applications:

  • Power supplies: Used in AC-DC and DC-DC power supplies.
  • Motor control: Employed in controlling the speed and direction of motors.
  • Inverters: Utilized in converting DC power to AC power.
  • Lighting systems: Used in LED lighting and ballast circuits.
  • Renewable energy systems: Implemented in solar inverters and wind turbine converters.

Features:

  • High breakdown voltage: Offers robust performance in high-voltage applications.
  • Low on-resistance (RDS(on)): Reduces power loss and improves efficiency.
  • Fast switching speed: Enables high-frequency operation.
  • High avalanche energy: Provides robustness against voltage spikes.
  • Low gate charge: Reduces drive power requirements.
  • T0-252 package: Suitable for surface mount assembly and efficient heat dissipation.

Benefits:

  • Improved system efficiency: Reduces power consumption and heat generation.
  • Enhanced reliability: Robust design provides protection against voltage surges and transients.
  • Smaller and lighter designs: Compact package allows for integration into space-constrained applications.
  • Reduced system cost: High efficiency translates to lower energy costs.
  • Environmentally friendly: RoHS compliant, minimizing environmental impact.

Additional Details:

The PJU3NA80_T0 typically features a drain-source voltage (VDS) rating of 800V and a continuous drain current (ID) around 3A. Its high breakdown voltage makes it suitable for applications where voltage spikes and transients are a concern. The low on-resistance minimizes power loss, leading to higher efficiency and reduced heat generation. The T0-252 package facilitates efficient heat dissipation, contributing to the device's overall reliability. The MOSFET is designed for fast switching speeds, allowing for high-frequency operation, which is essential in modern power electronics applications. The combination of high voltage, low on-resistance, and fast switching speed makes the PJU3NA80_T0 a versatile and reliable choice for a wide range of power management and control applications. It is a crucial component in ensuring the efficiency and robustness of electronic systems.

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