The 2SD2335 is an NPN silicon epitaxial transistor manufactured by Panasonic. It is designed for use in high-speed switching applications, particularly in power supplies and DC-DC converters. The transistor is known for its low saturation voltage, which contributes to higher efficiency in switching circuits.
Applications:
- Switching Power Supplies
- DC-DC Converters
- Motor Drivers
- Inverters
- High-Speed Switching Circuits
Features:
- High Collector Current: IC = 8A
- Low Saturation Voltage: VCE(sat) = 0.5V (Typical) at IC = 4A
- Fast Switching Speed: tf = 0.2 μs (Typical)
- High Power Dissipation: PC = 40W
Benefits:
- Improved efficiency in switching applications
- Reduced power loss and heat generation
- Enhanced system reliability
- Compact and efficient circuit design
Additional Details:
Absolute Maximum Ratings:
- Collector-Base Voltage (VCBO): 60V
- Collector-Emitter Voltage (VCEO): 50V
- Emitter-Base Voltage (VEBO): 6V
- Collector Current (IC): 8A
- Base Current (IB): 1A
- Collector Power Dissipation (PC): 40W (Tc=25°C)
- Junction Temperature (Tj): 150°C
- Storage Temperature (Tstg): -55°C to +150°C
Electrical Characteristics (at Ta=25°C):
- Collector Cutoff Current (ICBO): 1 μA (Maximum) at VCB=60V
- Emitter Cutoff Current (IEBO): 1 μA (Maximum) at VEB=6V
- DC Current Gain (hFE): 100 to 300 at VCE=2V, IC=1A
- Collector-Emitter Saturation Voltage (VCE(sat)): 0.5V (Typical) at IC=4A, IB=0.4A
- Transition Frequency (fT): 25 MHz (Typical)
The 2SD2335 is typically supplied in a TO-220 package. For detailed specifications and application notes, refer to the official Panasonic datasheet.
