The 2SD2335 is an NPN silicon epitaxial transistor manufactured by Panasonic. It is designed for use in high-speed switching applications, particularly in power supplies and DC-DC converters. The transistor is known for its low saturation voltage, which contributes to higher efficiency in switching circuits.

Applications:

• Switching Power Supplies
• DC-DC Converters
• Motor Drivers
• Inverters
• High-Speed Switching Circuits

Features:

• High Collector Current: IC = 8A
• Low Saturation Voltage: VCE(sat) = 0.5V (Typical) at IC = 4A
• Fast Switching Speed: tf = 0.2 μs (Typical)
• High Power Dissipation: PC = 40W

Benefits:

• Improved efficiency in switching applications
• Reduced power loss and heat generation
• Enhanced system reliability
• Compact and efficient circuit design

Additional Details:

Absolute Maximum Ratings:

• Collector-Base Voltage (VCBO): 60V
• Collector-Emitter Voltage (VCEO): 50V
• Emitter-Base Voltage (VEBO): 6V
• Collector Current (IC): 8A
• Base Current (IB): 1A
• Collector Power Dissipation (PC): 40W (Tc=25°C)
• Junction Temperature (Tj): 150°C
• Storage Temperature (Tstg): -55°C to +150°C

Electrical Characteristics (at Ta=25°C):

• Collector Cutoff Current (ICBO): 1 μA (Maximum) at VCB=60V
• Emitter Cutoff Current (IEBO): 1 μA (Maximum) at VEB=6V
• DC Current Gain (hFE): 100 to 300 at VCE=2V, IC=1A
• Collector-Emitter Saturation Voltage (VCE(sat)): 0.5V (Typical) at IC=4A, IB=0.4A
• Transition Frequency (fT): 25 MHz (Typical)

The 2SD2335 is typically supplied in a TO-220 package. For detailed specifications and application notes, refer to the official Panasonic datasheet.