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SSR1N60BTM

Part No SSR1N60BTM
Manufacturer ON Semiconductor
Catalog FETs - Single
Description MOSFET N-CH 600V 0.9A DPAK
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Tape and Reel
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 600V
Id - Continuous Drain Current 900mA
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 12Ohm at 450mA, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 7.7nC at 10V
Gate Source Voltage (Maximum) ±30V
Input Capacitance (Ciss) (Maximum) at Vds 215pF at 25V
Power Dissipation (Maximum) 2.5W, 28W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Supplier Device Package D-Pak
Manufacturer Package TO-252-3, DPak (2 Leads + Tab), SC-63
Manufacturer Pack Quantity 2,500
MSL Level 1 (Unlimited)
Win Source Part Number 727244-SSR1N60BTM
Popularity Low
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SSR1N60BTM CAD Model

Description

ON Semiconductor SSR1N60BTM MOSFET Overview

The SSR1N60BTM is a high-performance Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) designed and manufactured by ON Semiconductor, a leading provider in the semiconductor industry. This device is part of ON Semiconductor's extensive portfolio of power MOSFETs, offering efficient power management and conversion for a wide range of applications.

Key Features

  • Device Type: Power MOSFET
  • Configuration: Single N-Channel
  • Drain-to-Source Voltage (VDS): 600V
  • Continuous Drain Current (ID): 1.2A
  • Power Dissipation (PD): 50W
  • RDS(on): 5.5 Ohm typical at VGS = 10V
  • Gate Charge (Qg): Low
  • Package: TO-220AB

Performance and Efficiency

The SSR1N60BTM MOSFET is engineered to deliver high voltage capability and efficient power conversion. With a drain-to-source voltage rating of 600V, it is well-suited for high voltage applications. The device's low on-state resistance ensures minimal voltage drop and power loss, enhancing overall efficiency. Its low gate charge facilitates faster switching speeds, further improving performance in high-frequency operations.

Applications

This MOSFET is ideal for a variety of applications, including:

  • Switch Mode Power Supplies (SMPS)
  • Power Inverters
  • Motor Control Circuits
  • Lighting Systems
  • High Voltage Switching
  • Other Power Management Tasks

Reliability and Durability

ON Semiconductor's commitment to quality is evident in the SSR1N60BTM, which is built to meet high standards of reliability and durability. The device is encapsulated in a robust TO-220AB package, which provides excellent thermal characteristics and mechanical protection. Users can expect consistent performance even in demanding conditions, making it a reliable choice for industrial and commercial power applications.

Conclusion

With its high voltage capability, efficient power conversion, and fast switching speeds, the SSR1N60BTM from ON Semiconductor represents a versatile and reliable solution for designers looking to optimize their power management systems. Its robust construction and adherence to ON Semiconductor's quality standards make it a go-to component for engineers across various industries.

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Pricing & Ordering

Quantity Unit Price Ext. Price
180+ $0.3269 $58.8420
435+ $0.2680 $116.5800
670+ $0.2599 $174.1330
920+ $0.2518 $231.6560
1,185+ $0.2437 $288.7845
1,590+ $0.2183 $347.0970
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 98,882 pieces
MOQ: 180 pcs
Order Increment : 1 pcs
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