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SGS6N60UFTU

Part No SGS6N60UFTU
Manufacturer ON Semiconductor
Catalog IGBTs - Single
Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Category Discrete Semiconductor Products>Transistors - IGBTs - Single
Mfr onsemi
Package Tube
Product Status Obsolete
Voltage - Collector Emitter Breakdown (Max) 600 V
Current - Collector (Ic) (Max) 6 A
Current - Collector Pulsed (Icm) 25 A
Vce(on) (Max) @ Vge, Ic 2.6V @ 15V, 3A
Power - Max 22 W
Switching Energy 57µJ (on), 25µJ (off)
Input Type Standard
Gate Charge 15 nC
Td (on/off) @ 25°C 15ns/60ns
Test Condition 300V, 3A, 80Ohm, 15V
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Supplier Device Package TO-220F-3
Base Product Number SGS6N
Standard Package 1,000
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277406-SGS6N60UFTU
Ultra Librarian 3D Model Ultra Librarian SGS6N60UFTU CAD Model

Description

The ON Semiconductor SGS6N60UFTU is a high-performance insulated gate bipolar transistor (IGBT) that offers a robust and efficient solution for a wide range of power switching applications. This IGBT is designed to provide optimal performance in terms of switching speed, saturation voltage, and energy efficiency, making it an ideal choice for designers looking to improve the performance and reliability of their power management systems.

Key Features

  • Voltage Rating: The SGS6N60UFTU has a collector-to-emitter voltage rating of 600V, which allows it to handle high voltage applications with ease.
  • Current Capability: With a continuous collector current rating of up to 6A, this IGBT can manage significant power levels, suitable for a variety of demanding applications.
  • Low Saturation Voltage: The device features a low on-state saturation voltage, minimizing power losses and improving efficiency in operation.
  • Fast Switching Speed: The fast switching characteristics of the SGS6N60UFTU reduce switching losses and enhance performance in high-frequency applications.
  • High Input Impedance: The high input impedance ensures that the gate drive requirements are minimal, which simplifies the drive circuitry.
  • Co-Packaged Free Wheeling Diode: The inclusion of a co-packaged free wheeling diode provides additional protection against reverse voltage and reduces component count in the circuit design.

Applications

The SGS6N60UFTU is suitable for a diverse range of applications where efficient power conversion is critical. Some of the typical applications include:

  • AC and DC motor drives
  • Uninterruptible power supplies (UPS)
  • Power factor correction (PFC) circuits
  • Induction heating systems
  • Switched-mode power supplies (SMPS)
  • Electronic lighting ballasts

Quality and Reliability

ON Semiconductor is known for its commitment to quality and reliability, and the SGS6N60UFTU is no exception. It is designed to meet the stringent requirements of industrial and consumer applications, ensuring long operational life and consistent performance.

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