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SGR2N60UFDTF

Part No SGR2N60UFDTF
Manufacturer ON Semiconductor
Catalog IGBTs - Single
Description IGBT 600V 2.4A 25W DPAK
Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Features IGBT - 600 V 2.4 A 25 W Surface Mount TO-252AA
Manufacturer ON Semiconductor
Package Reel - TR
Part Status Obsolete
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Surface Mount
Package TO-252-3, DPak (2 Leads + Tab), SC-63
Case / Package TO-252AA
Family Name SGR2N
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Quantity per package 2000
Popularity High
Supply and Demand Status Balance
Win Source Part Number 894315-SGR2N60UFDTF
Ultra Librarian 3D Model Ultra Librarian SGR2N60UFDTF CAD Model

Description

ON Semiconductor SGR2N60UFDTF IGBT Overview

The SGR2N60UFDTF is an advanced insulated gate bipolar transistor (IGBT) developed by ON Semiconductor, a company renowned for its innovative power and signal management solutions. This high-performance IGBT is designed to offer superior switching performance and high thermal stability, making it an excellent choice for a wide range of power applications.

Key Features

  • High Current Capability: The SGR2N60UFDTF is capable of handling high continuous current, making it suitable for demanding applications that require robust current handling capabilities.
  • Low On-State Voltage: This IGBT features a low on-state voltage drop, which translates to improved efficiency and reduced power losses during operation.
  • Fast Switching Speed: With its fast switching speed, the SGR2N60UFDTF ensures minimal switching losses and is ideal for high-frequency applications.
  • High Input Impedance: The high input impedance characteristic of this IGBT allows for easy drive and control, which can simplify circuit design and reduce the need for additional components.
  • Enhanced Ruggedness: ON Semiconductor has engineered this IGBT to withstand harsh operating conditions, providing enhanced ruggedness and reliability.

Applications

The versatile nature of the SGR2N60UFDTF makes it suitable for a variety of applications, including:

  • Motor drives and inverters
  • Power supplies and converters
  • Induction heating systems
  • Uninterruptible power supplies (UPS)
  • Renewable energy inverters, such as those used in solar and wind power systems

Technical Specifications

The SGR2N60UFDTF boasts a range of technical specifications that highlight its performance capabilities:

  • 600V Collector-to-Emitter Breakdown Voltage
  • Continuous Collector Current at 25°C: 3.6A
  • Gate-Emitter Voltage: ±20V
  • Low Collector-Emitter Saturation Voltage
  • Maximum Operating Temperature: +150°C

In conclusion, the SGR2N60UFDTF from ON Semiconductor represents a powerful solution for designers seeking an IGBT with high efficiency, reliability, and performance. Its robust construction and advanced features make it a smart choice for a broad array of power applications.

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