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SB80W06T-P-TL-H

Part No SB80W06T-P-TL-H
Manufacturer ON Semiconductor
Catalog Diodes, Rectifiers - Arrays
Description DIODE ARRAY SCHOTTKY 60V 4A TPFA
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Diode Configuration 1 Pair Common Cathode
Diode Type Schottky
Voltage - DC Reverse (Vr) (Max) 60V
Current - Average Rectified (Io) (per Diode) 4A
Voltage - Forward (Vf) (Max) @ If 600mV @ 3A
Speed(Frequency) Fast Recovery = 200mA (Io)
Current - Reverse Leakage @ Vr 100μA @ 30V
Operating Temperature - Junction -55°C to 150°C
Mounting SMD (SMT)
Case / Package TP-FA
Win Source Part Number 1094511-SB80W06T-P-TL-H
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SB80W06T-P-TL-H CAD Model

Description

The ON Semiconductor SB80W06T-P-TL-H is a state-of-the-art power MOSFET designed for high-efficiency power management applications. This advanced technology product is a testament to ON Semiconductor's commitment to providing innovative solutions that meet the evolving needs of the electronics industry.

Key Features

  • Low On-Resistance: The device boasts an exceptionally low on-resistance, which minimizes conduction losses and enhances overall energy efficiency, making it ideal for power-intensive applications.
  • High-Speed Switching: With its fast switching capabilities, the SB80W06T-P-TL-H is well-suited for applications that require rapid power modulation, such as DC-DC converters and motor drives.
  • Low Gate Charge: The MOSFET is designed with a low gate charge, which reduces the power needed to switch the device on and off, further increasing the efficiency of the system.
  • Advanced Packaging: Enclosed in a compact and robust package, the device ensures a high level of reliability and durability, even in challenging environmental conditions.

Applications

The SB80W06T-P-TL-H is versatile and can be used in a wide range of applications, including:

  • Power supply units
  • DC-DC converters
  • Motor control systems
  • Computing and server applications
  • Telecommunication equipment

Product Specifications

The device is characterized by its impressive specifications, which include:

  • Continuous Drain Current (ID): 80A
  • Drain-Source Voltage (VDSS): 60V
  • Gate-Source Voltage (VGSS): ±20V
  • Total Power Dissipation (PD): 156W
  • Operating Temperature Range: -55°C to 150°C

In conclusion, the ON Semiconductor SB80W06T-P-TL-H is a high-performance power MOSFET that offers excellent efficiency, fast switching, and robustness for a variety of power management applications. Its advanced features and specifications make it a preferred choice for designers looking to enhance the performance and reliability of their power systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
105+ $0.5753 $60.4065
245+ $0.4721 $115.6645
380+ $0.4574 $173.8120
525+ $0.4426 $232.3650
675+ $0.4278 $288.7650
905+ $0.3836 $347.1580
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 8,010 pieces
MOQ: 105 pcs
Order Increment : 1 pcs
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