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RB520S30T1G

Part No RB520S30T1G
Manufacturer ON Semiconductor
Catalog Diodes, Rectifiers - Single
Description DIODE SCHOTTKY 30V 200MA SOD523
Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Diode Type Schottky
Voltage - DC Reverse (Vr) (Max) 30V
Current - Average Rectified (Io) 200mA (DC)
Voltage - Forward (Vf) (Max) @ If 600mV @ 200mA
Current - Reverse Leakage @ Vr 1μA @ 10V
Mounting SMD (SMT)
Case / Package SOD-523
Operating Temperature - Junction -55°C to 150°C
Win Source Part Number 027144-RB520S30T1G
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Application Field Used in Portable Devices
Family Name RB520S30
Introduction Date October 27, 2003
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2023
Ultra Librarian 3D Model Ultra Librarian RB520S30T1G CAD Model

Description

ON Semiconductor RB520S30T1G Schottky Barrier Diode

The ON Semiconductor RB520S30T1G Schottky Barrier Diode is a high-performance, surface-mount component designed for ultra-fast switching applications. This diode is a preferred choice for engineers and designers who require a reliable and efficient solution for rectification, freewheeling, and reverse voltage protection in their electronic circuits.

With its compact SOD-523 package, the RB520S30T1G offers a minimal footprint on printed circuit boards, making it ideal for space-constrained applications. Despite its small size, this Schottky diode delivers a robust performance with a continuous forward current of 200 mA and a peak repetitive reverse voltage of 30 V. The low forward voltage drop (typically 0.37 V at 1 mA) ensures high efficiency, which is critical in portable and battery-powered devices.

The RB520S30T1G is characterized by its fast switching speed, which is essential for high-frequency operations. This feature, combined with the low power loss and reduced heat generation, makes the diode an excellent choice for high-efficiency power management designs. Additionally, the device's low reverse leakage current contributes to its overall performance by minimizing power loss when the diode is in the off state.

Engineered to withstand rigorous conditions, the RB520S30T1G boasts a junction temperature range of -55°C to +125°C, allowing it to operate effectively across a wide range of temperatures. This reliability is further enhanced by its compliance with the RoHS directive, which ensures that it is free from hazardous substances, making it suitable for use in environmentally sensitive applications.

Whether used in mobile phones, digital cameras, PDAs, or other high-density electronic systems, the ON Semiconductor RB520S30T1G Schottky Barrier Diode is an excellent choice for designers looking to optimize their power management schemes without sacrificing performance or reliability.

Overall, the RB520S30T1G from ON Semiconductor is a testament to the company's commitment to providing high-quality, energy-efficient components for the modern electronic industry.

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Pricing & Ordering

Quantity Unit Price Ext. Price
1,045+ $0.0479 $50.0555
2,230+ $0.0449 $100.1270
3,460+ $0.0434 $150.1640
4,965+ $0.0403 $200.0895
6,445+ $0.0388 $250.0660
8,045+ $0.0373 $300.0785
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 300,000 pieces
MOQ: 1045 pcs
Order Increment : 1 pcs
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