ON Semiconductor QEB363ZR Infrared LED

The ON Semiconductor QEB363ZR is an advanced infrared LED (IRED) that provides high-intensity infrared light output. This product is specifically designed for applications where reliable and efficient infrared emission is crucial. The QEB363ZR is a versatile component, suitable for a wide range of applications including remote control systems, touch-less motion detectors, and infrared illumination for cameras.

Constructed with a gallium arsenide (GaAs) die, this IRED offers a peak wavelength of 940nm, which is in the near-infrared range, making it invisible to the naked eye but perfect for sensors and cameras that require IR light. The device is encapsulated in a clear, untinted plastic package, which allows for maximum transmission of the infrared light. The lens design of the QEB363ZR is optimized to produce a well-defined spatial radiation pattern, ensuring that the emitted light is directed precisely where it is needed.

The QEB363ZR is designed to be driven by low forward voltage (typically 1.2V) and operates efficiently with a forward current of 100mA. This allows for low power consumption while maintaining high output intensity, which is essential for battery-powered devices. The IRED also features a high radiant intensity and fast switching times, making it ideal for high-speed data transmission and accurate motion detection.

With its compact size, the QEB363ZR can be easily integrated into various electronic assemblies. It is also lead-free and RoHS compliant, which ensures that it meets the latest environmental standards for electronic components. ON Semiconductor's commitment to quality means that the QEB363ZR is a reliable choice for designers looking to incorporate infrared technology into their products.

Overall, the QEB363ZR from ON Semiconductor is a high-performance infrared LED that offers energy efficiency, precise light emission, and fast switching capabilities, making it a top choice for engineers and designers in the field of infrared applications.