Product Overview: NVBF170LT1G - ON Semiconductor

The NVBF170LT1G is a high-performance, small signal N-Channel MOSFET produced by ON Semiconductor, a leader in energy-efficient innovations. This MOSFET is designed to meet the rigorous demands of modern electronic applications, offering a combination of low on-resistance and high switching speed.

Key Features

• Low Threshold Voltage: The NVBF170LT1G has a low threshold voltage, which makes it suitable for low voltage applications and ensures efficient operation even at lower gate voltages.
• High Current Capability: Capable of handling a continuous drain current of 2.1 A, this component is ideal for high-power applications.
• Power Dissipation: With a power dissipation of 0.35 W, it can effectively handle the energy during operation without overheating.
• Low On-Resistance: The device boasts an exceptionally low on-resistance of 180 mΩ at 4.5 V, which minimizes power loss and improves overall efficiency.
• Fast Switching Speed: Its fast switching capability enhances performance in circuits that require quick transitions.
• SOT-23 Package: Encased in a compact SOT-23 package, it is suitable for space-constrained applications.

Applications

The NVBF170LT1G is versatile and can be used in a wide range of applications, including:

• Power Management
• Load Switch
• Battery Protection
• DC/DC Converters
• Switching Circuits

Product Specifications

With its robust design and reliable performance, the NVBF170LT1G from ON Semiconductor is an excellent choice for designers looking for a MOSFET that delivers both efficiency and power in a compact footprint.