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NTMFS4C808NAT1G

Part No NTMFS4C808NAT1G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description TRENCH 6 30V NCH / N-Channel 30 V 9A (Ta), 52A (Tc) 760mW (Ta), 25.5W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr onsemi
Package Tape & Reel (TR)
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 9A (Ta), 52A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 4.8mOhm @ 18A, 10V
Vgs(th) (Max) @ Id 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 18.2 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1670 pF @ 15 V
Power Dissipation (Max) 760mW (Ta), 25.5W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package 5-DFN (5x6) (8-SOFL)
Package / Case 8-PowerTDFN, 5 Leads
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Other Names 488-NTMFS4C808NAT1GTR,2156-NTMFS4C808NAT1G-488
Standard Package 1,500
Win Source Part Number 1132491-NTMFS4C808NAT1G
Ultra Librarian 3D Model Ultra Librarian NTMFS4C808NAT1G CAD Model

Description

The NTMFS4C808NAT1G is a high-performance, N-channel Power MOSFET brought to you by ON Semiconductor, a leader in energy-efficient innovations. This MOSFET is designed to meet the rigorous demands of a wide array of applications, ranging from power management to industrial solutions. With its compact footprint and exceptional efficiency, the NTMFS4C808NAT1G is an ideal choice for designers looking to optimize power density and performance in their systems.

Key Features

  • Low On-Resistance: The NTMFS4C808NAT1G features an ultra-low on-resistance (RDS(on)), which translates to reduced conduction losses and improved overall efficiency in applications.
  • High Current Capability: This MOSFET can handle high continuous drain currents, making it suitable for heavy-duty operations.
  • High-Temperature Performance: It is designed to perform reliably in high-temperature environments, ensuring stability and longevity of your application.
  • Single Pulse Avalanche Energy Rated: This device can safely absorb high-energy pulses without failure, providing robust protection against surges and spikes in circuits.
  • RoHS Compliant: The NTMFS4C808NAT1G complies with RoHS standards, minimizing the environmental impact by excluding harmful substances.

Applications

The versatility of the NTMFS4C808NAT1G makes it suitable for a variety of applications, including:

  • DC/DC Converters
  • Power Supply Modules
  • Motor Drives
  • Automotive Systems
  • Computing and Server Systems
  • Power Management Solutions

Quality and Reliability

ON Semiconductor is committed to delivering high-quality products. The NTMFS4C808NAT1G is manufactured with the highest standards, ensuring that it meets the stringent requirements of industrial and automotive-grade applications. With its robust design and ON Semiconductor's dedication to reliability, this Power MOSFET is a dependable component for your power circuitry needs.

Environmental Impact

Adhering to environmental regulations, the NTMFS4C808NAT1G is not only efficient but also eco-friendly. By complying with RoHS directives, ON Semiconductor ensures that this product is free from specific hazardous materials, making it a safer choice for the planet while providing the performance you need.

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Pricing & Ordering

Quantity Unit Price Ext. Price
7+ $7.2762 $50.9334
17+ $5.9702 $101.4934
26+ $5.7836 $150.3736
36+ $5.5971 $201.4956
47+ $5.4105 $254.2935
62+ $4.8508 $300.7496
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 19,241 pieces
MOQ: 7 pcs
Order Increment : 1 pcs
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