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NTHD5903T1

Part No NTHD5903T1
Manufacturer ON Semiconductor
Catalog FETs - Arrays
Description MOSFET 2P-CH 20V 2.2A CHIPFET / Mosfet Array
Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FET, MOSFET Arrays
Mfr ON Semiconductor
Package Bulk
Product Status Obsolete
Base Product Number NTHD59
Standard Package 3,000 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 649817-NTHD5903T1
Ultra Librarian 3D Model Ultra Librarian NTHD5903T1 CAD Model

Description

ON Semiconductor NTHD5903T1 Dual P-Channel Power MOSFET

The ON Semiconductor NTHD5903T1 is a state-of-the-art dual P-Channel Power MOSFET designed to deliver high-efficiency power management and switching performance for a wide range of applications. This compact, surface-mount component is a perfect solution for space-constrained environments, offering designers a combination of low on-resistance and high current handling capabilities.

Key Features

  • Low On-Resistance: The NTHD5903T1 boasts an exceptionally low on-resistance, which minimizes power loss and improves overall efficiency, making it ideal for power-sensitive applications.
  • Dual P-Channel Configuration: The dual MOSFET design allows for greater flexibility in circuit design, enabling the implementation of complex switching circuits while saving board space.
  • High Current Handling: With the capability to handle high current levels, this MOSFET is well-suited for demanding tasks such as power supply and load switching.
  • PowerTrench® Technology: ON Semiconductor's proprietary PowerTrench® process technology enhances the device's performance by optimizing the cell structure for reduced on-resistance and lower gate charge.
  • Thermal Management: The NTHD5903T1 is designed with excellent thermal characteristics, ensuring reliable operation even under high power dissipation scenarios.

Applications

The versatility of the NTHD5903T1 makes it suitable for a broad range of applications, including:

  • Power Management in Portable Devices
  • Battery Powered Systems
  • DC/DC Converters
  • Load Switching
  • Motor Control Circuits

Product Specifications

The NTHD5903T1 operates with a drain-source voltage (VDS) of -30 V and a continuous drain current (ID) of -3.3 A. The device features a low threshold voltage, making it suitable for low voltage applications. Its compact chip-scale package ensures minimal footprint on the PCB, allowing for high-density board designs.

For engineers and designers looking for a reliable and efficient dual P-Channel MOSFET, the ON Semiconductor NTHD5903T1 offers a compelling mix of performance, size, and power handling, making it an excellent choice for next-generation electronic designs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
465+ $0.1251 $58.1715
1,125+ $0.1027 $115.5375
1,745+ $0.0995 $173.6275
2,400+ $0.0963 $231.1200
3,105+ $0.0931 $289.0755
4,160+ $0.0834 $346.9440
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 51,000 pieces
MOQ: 465 pcs
Order Increment : 1 pcs
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