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NGTB30N120IHLWG

Part No NGTB30N120IHLWG
Manufacturer ON Semiconductor
Catalog IGBTs - Single
Description IGBT 1200V 30A TO247
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Features IGBT Trench Field Stop 1200 V 60 A 260 W Through Hole TO-247-3
Manufacturer ON Semiconductor
Package Tube
Part Status Obsolete
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Through Hole
Package TO-247-3
Case / Package TO-247-3
Family Name NGTB30
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Quantity per package 30
Popularity High
Supply and Demand Status Balance
Win Source Part Number 929126-NGTB30N120IHLWG
Ultra Librarian 3D Model Ultra Librarian NGTB30N120IHLWG CAD Model

Description

ON Semiconductor NGTB30N120IHLWG - High-Efficiency IGBT

The NGTB30N120IHLWG is a cutting-edge insulated gate bipolar transistor (IGBT) developed by ON Semiconductor, a leading provider of semiconductor-based solutions. This IGBT is designed to offer a high level of efficiency and reliability for a wide range of power applications. It is particularly well-suited for applications requiring fast switching and high voltage capabilities, such as motor drives, uninterruptible power supplies (UPS), solar inverters, and induction heating systems.

With a collector-emitter voltage (Vce) of 1200V and a continuous collector current (Ic) rating of 30A at 25°C, the NGTB30N120IHLWG is capable of handling high power levels while maintaining low conduction losses. This IGBT utilizes ON Semiconductor's proprietary trench gate field-stop technology, which enhances its performance by offering lower on-state voltage drop (Vce(sat)) and minimized switching losses.

The NGTB30N120IHLWG also features a co-packaged freewheeling diode with a low forward voltage drop, further improving the efficiency of the device in applications that require a diode for inductive load conditions. This integrated diode is optimized to work in tandem with the IGBT, ensuring smooth and efficient operation across a wide range of conditions.

For safety and reliability, the NGTB30N120IHLWG includes several built-in protection features. These include a maximum junction temperature of 175°C, which prevents the device from overheating during operation. Additionally, it is equipped with a robust gate oxide layer to withstand high voltage spikes and transients, and its package is designed for optimal thermal management, ensuring a long operational lifespan.

The device is housed in a TO-247 long leads package, which is widely recognized for its high power dissipation capabilities. This package allows for easy mounting onto heat sinks and provides ample space for electrical isolation, making it a convenient choice for designers looking to incorporate the IGBT into their systems.

Overall, the ON Semiconductor NGTB30N120IHLWG represents a reliable and efficient solution for high power switching applications, delivering performance that can help reduce system costs and improve energy savings.

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Pricing & Ordering

Quantity Unit Price Ext. Price
2+ $41.6239 $83.2478
4+ $34.1534 $136.6136
6+ $33.0861 $198.5166
8+ $32.0189 $256.1512
10+ $30.9517 $309.5170
13+ $27.7489 $360.7357
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,900 pieces
MOQ: 2 pcs
Order Increment : 1 pcs
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