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NGTB20N135IHRWG

Part No NGTB20N135IHRWG
Manufacturer ON Semiconductor
Catalog IGBTs - Single
Description IGBT with Monolithic Free Wheeling Diode
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Tube
IGBT Type Trench Field Stop
Voltage - Collector Emitter Breakdown (Maximum) 1350V
Current - Collector (Ic) (Maximum) 40A
Current - Collector Pulsed (Icm) 120A
Vce(on) (Maximum) @ Vge, Ic 2.65V @ 15V, 20A
Power - Max 394W
Switching Energy 600μJ (off)
Input Type Standard
Gate Charge 234nC
Td (on/off) @ 25°C -/245ns
Test Condition 600V, 20A, 10 Ohm, 15V
Operating Temperature Range -40°C ~ 175°C (TJ)
Mounting Style Through Hole
Package TO-247-3
Manufacturer Package TO-247
Win Source Part Number 1231148-NGTB20N135IHRWG
Manufacturer Homepage www.onsemi.com
Popularity Medium
Supply and Demand Status Limited
Family Name NGTB20N135IHRWG
Introduction Date March 15, 2013
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2024
Ultra Librarian 3D Model Ultra Librarian NGTB20N135IHRWG CAD Model

Description

The NGTB20N135IHRWG is a high-performance insulated gate bipolar transistor (IGBT) developed by ON Semiconductor, a leading provider of semiconductor-based solutions. This IGBT is designed to deliver exceptional efficiency and power control for a wide range of applications, including motor drives, uninterruptible power supplies (UPS), inverters, and other energy-efficient systems.

Key Features

  • High Current Capability: The NGTB20N135IHRWG is capable of handling continuous collector currents up to 40A at 25°C, making it suitable for high-power applications.
  • High Voltage Rating: With a collector-emitter voltage (Vce) rating of 1350V, this IGBT can efficiently manage high voltage operations, providing robust performance in demanding environments.
  • Low On-Resistance: The device features a low on-state voltage drop due to its optimized saturation voltage, resulting in reduced conduction losses and improved overall efficiency.
  • Fast Switching Speed: The fast switching characteristics of the NGTB20N135IHRWG minimize switching losses and enhance performance in high-frequency applications.
  • Co-Packaged Free-Wheeling Diode: This IGBT comes with an integrated fast recovery diode, which provides protection against reverse voltage transients and reduces component count in circuit designs.

Applications

The NGTB20N135IHRWG IGBT is ideal for a variety of applications that require high efficiency and power density. Its robustness and reliability make it a preferred choice for:

  • Motor Drives
  • Power Inverters
  • Power Factor Correction (PFC) Circuits
  • Switched Mode Power Supplies (SMPS)
  • Renewable Energy Systems
  • Welding Equipment

Quality and Reliability

ON Semiconductor's commitment to quality and reliability is evident in the NGTB20N135IHRWG. The device is manufactured using state-of-the-art technology and is subjected to rigorous testing to ensure high performance and durability in the field. With its advanced features and proven reliability, the NGTB20N135IHRWG is an excellent choice for designers looking to enhance the efficiency and longevity of their power management systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
13+ $3.9992 $51.9896
27+ $3.7461 $101.1447
42+ $3.6196 $152.0232
60+ $3.3664 $201.9840
78+ $3.2399 $252.7122
97+ $3.1133 $301.9901
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,800 pieces
MOQ: 13 pcs
Order Increment : 1 pcs
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