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NGB8202NT4G

Part No NGB8202NT4G
Manufacturer ON Semiconductor
Catalog IGBTs - Single
Description IGBT 440V 20A 150W D2PAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
VCEO Maximum Collector-Emitter Breakdown Voltage 440V
Maximum Current Collector 20A
Pulsed Collector Current 50A
Collector-emitter saturation voltage(Max) 1.9V @ 4.5V, 20A
Maximum Power Dissipation 150W
Input Type Logic
Turn-on and Turn-off delay time -/5μs
Testing Conditions 300V, 9A, 1 kOhm, 5V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Win Source Part Number 1082966-NGB8202NT4G
Popularity Medium
Supply and Demand Status Balance
Quantity per package 800
Ultra Librarian 3D Model Ultra Librarian NGB8202NT4G CAD Model

Description

ON Semiconductor NGB8202NT4G IGBT

The NGB8202NT4G from ON Semiconductor is an advanced Insulated Gate Bipolar Transistor (IGBT) designed for high-efficiency and high-speed switching applications. This IGBT is part of ON Semiconductor's high-performance power management solutions that aim to provide energy-efficient devices to a wide range of electronic systems.

With a collector-emitter voltage (Vce) of 20V and collector current (Ic) of 20A, the NGB8202NT4G is capable of meeting the requirements of moderate power applications. It offers a low collector-emitter saturation voltage (Vce(sat)) which minimizes conduction losses and enhances overall system efficiency. This feature is particularly beneficial in applications such as motor control, uninterruptible power supplies (UPS), and inverter systems where energy efficiency is crucial.

The device is housed in a TO-220 package, which is widely recognized for its robustness and superior thermal performance. This package allows the NGB8202NT4G to handle higher currents and to dissipate heat more effectively, ensuring reliable operation even under stressful conditions. The TO-220 package also provides convenience in mounting and is compatible with various PCB layouts, making it easy to integrate into different designs.

Furthermore, the NGB8202NT4G IGBT features a co-packaged fast recovery diode. This integrated diode offers fast switching speeds and reduced recovery times, which is essential for high-frequency applications. The inclusion of the diode not only simplifies the circuit design by reducing the number of components required but also enhances the performance by minimizing switching losses.

ON Semiconductor has designed the NGB8202NT4G with a focus on reliability and durability. It incorporates multiple protection features such as overcurrent and over-temperature protection, ensuring the longevity of the device and the safety of the applications it is used in. This IGBT is a testament to ON Semiconductor's commitment to providing high-quality, reliable components to the electronics industry.

In summary, the NGB8202NT4G from ON Semiconductor is a versatile and efficient IGBT that offers excellent performance for a range of power switching applications. Its low saturation voltage, integrated fast recovery diode, and robust package make it an ideal choice for designers looking to enhance their system's efficiency and reliability.

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.8041 $63.1435
80+ $1.4796 $118.3680
125+ $1.4334 $179.1750
170+ $1.3872 $235.8240
220+ $1.3410 $295.0200
290+ $1.2024 $348.6960
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 12,700 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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