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NFAQ1060L36T

Part No NFAQ1060L36T
Manufacturer ON Semiconductor
Catalog Power Drivers - Modules
Description INTELLIGENT POWER MODULE (IPM), / Power Driver Module IGBT 3 Phase Inverter 600 V 10 A 38-PowerDIP Module (0.610", 24.00mm), 24 Leads
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Power Driver Modules
Mfr onsemi
Package Tube
Type IGBT
Configuration 3 Phase Inverter
Current 10 A
Voltage 600 V
Voltage - Isolation 2000Vrms
Mounting Type Through Hole
Package / Case 38-PowerDIP Module (0.610", 24.00mm) , 24 Leads
Base Product Number NFAQ1060
Standard Package 400
MSL Level Not Applicable
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8542.39.0001
Win Source Part Number 1341373-NFAQ1060L36T
Ultra Librarian 3D Model Ultra Librarian NFAQ1060L36T CAD Model

Description

The NFAQ1060L36T is a high-performance, automotive-grade N-channel Power MOSFET brought to you by ON Semiconductor, a trusted leader in power and signal management. This product is specifically designed to meet the rigorous standards of the automotive industry, offering a combination of reliability, efficiency, and power density that is ideal for a wide range of applications.

Key Features

  • Low On-Resistance: The MOSFET features an exceptionally low on-resistance of 10.8 mΩ (typical), which translates to reduced conduction losses and improved overall efficiency in application.
  • High Current Capability: With a continuous drain current of 180 A, this MOSFET can handle high current applications with ease, making it suitable for power-intensive automotive systems.
  • Enhanced Thermal Performance: The NFAQ1060L36T is encapsulated in a Power56 package, which offers superior thermal performance and contributes to the device's longevity under high-temperature operating conditions.
  • Automotive Grade: Meeting AEC-Q101 standards, this MOSFET is guaranteed for automotive applications, ensuring reliability and performance under the harsh conditions typical of automotive environments.
  • Low Gate Charge: A low gate charge ensures that the MOSFET can switch on and off efficiently, which is critical for reducing switching losses and improving power efficiency in high-frequency operations.

Applications

The NFAQ1060L36T is ideally suited for a range of automotive applications, including:

  • Powertrain systems
  • Electric power steering
  • DC/DC converters
  • Motor drives

Product Specifications

Parameter Value
Drain-to-Source Voltage (VDS) 100 V
Continuous Drain Current (ID) 180 A
Power Dissipation (PD) 125 W
Operating Temperature Range -55°C to +175°C
Package Power56

With its robust design and outstanding performance characteristics, the NFAQ1060L36T from ON Semiconductor is an excellent choice for designers seeking a reliable MOSFET for their automotive applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
2+ $41.7278 $83.4556
3+ $34.2382 $102.7146
5+ $33.1682 $165.8410
7+ $32.0983 $224.6881
9+ $31.0283 $279.2547
11+ $27.8185 $306.0035
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 104 pieces
MOQ: 2 pcs
Order Increment : 1 pcs
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