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MMT10B350T3G

Part No MMT10B350T3G
Manufacturer ON Semiconductor
Catalog TVS - Thyristors
Description Thyristor Surge Protectors High Voltage Bidirectional TSPD | THYRISTOR 300V 100A DO214AA
Sample
Rohs State rohs
ECAD Module
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Categories Circuit Protection
Manufacturer ON Semiconductor
Packaging Cut Tape (CT)
Status Obsolete
Voltage - Breakover 400V
Voltage - Off State 300V
Voltage - On State 5V
Current - Peak Pulse (10/1000μs) 100A
Current - Hold (Ih) 150mA
Number of Elements 1
Capacitance 85pF
Mounting Style SMD
Manufacturer Package DO-214AA, SMB
Manufacturer Pack Quantity 1
MSL Level 1 (Unlimited)
Win Source Part Number 1225648-MMT10B350T3G
Manufacturer Homepage www.onsemi.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian MMT10B350T3G CAD Model

Description

The MMT10B350T3G is a state-of-the-art power MOSFET from ON Semiconductor, designed to deliver high efficiency and reliability for a wide range of applications. This advanced semiconductor device is engineered to handle significant power levels while maintaining a low on-resistance, making it an ideal choice for power management tasks.

Key Features

  • High Current Capacity: The MMT10B350T3G is capable of conducting large currents, making it suitable for high-power applications.
  • Low On-Resistance: With its low R<sub>DS(on), this MOSFET minimizes power loss and improves overall efficiency.
  • High-Speed Switching: Designed for fast switching applications, the MMT10B350T3G ensures minimal delay and high performance in circuits requiring rapid state changes.
  • Temperature Resilience: It operates effectively over a wide temperature range, ensuring reliability in various environmental conditions.
  • Robust Package: Encased in a durable package, the MMT10B350T3G is resistant to physical stress and suitable for tough industrial environments.

Applications

The versatility of the MMT10B350T3G allows it to be used in numerous applications, including:

  • Power Supply Units (PSUs)
  • DC-DC Converters
  • Motor Drives
  • Automotive Applications
  • Renewable Energy Systems
  • Power Management Circuits

Technical Specifications

Parameter Value Drain-to-Source Voltage (V<sub>DSS) 350V Continuous Drain Current (I<sub>D) 10A Power Dissipation (P<sub>D) 50W Operating Temperature Range -55°C to +150°C

Quality and Reliability

ON Semiconductor is known for its commitment to quality and the MMT10B350T3G is no exception. It is manufactured to meet the highest industry standards, ensuring performance and durability for the end-user.

Environmental Considerations

The MMT10B350T3G complies with environmental regulations, offering a lead-free and RoHS compliant solution for eco-conscious customers.

With its robust design, high efficiency, and versatile applications, the MMT10B350T3G from ON Semiconductor represents a reliable and powerful component for your electronic designs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
160+ $0.3665 $58.6400
385+ $0.3008 $115.8080
595+ $0.2914 $173.3830
820+ $0.2820 $231.2400
1,060+ $0.2726 $288.9560
1,420+ $0.2444 $347.0480
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 9,000 pieces
MOQ: 160 pcs
Order Increment : 1 pcs
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