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MMBFU310LT1G

Part No MMBFU310LT1G
Manufacturer ON Semiconductor
Catalog JFETs (Junction Field Effect)
Description JFET N-CH 25V 0.225W SOT23
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Voltage - Breakdown (V(BR)GSS) 25V
Drain-Source Breakdown Voltage 25V
Current - Drain (Idss) @ Vds (Vgs=0) 24mA @ 10V
Voltage - Cutoff (VGS off) @ Id 2.5V @ 1nA
Max Input Capacitance 5pF @ 10V (VGS)
Maximum Power Dissipation 225mW
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23-3 (TO-236)
Win Source Part Number 023724-MMBFU310LT1G
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian MMBFU310LT1G CAD Model

Description

ON Semiconductor MMBFU310LT1G N-Channel Power MOSFET

The MMBFU310LT1G from ON Semiconductor is a high-performance N-Channel Power MOSFET designed for a wide range of applications that require efficient power management and switching. This device is a testament to ON Semiconductor's commitment to providing energy-efficient solutions to the electronics industry.

The MMBFU310LT1G features a drain-to-source voltage (V<sub>DS) of 20V, making it suitable for low-voltage operations. It offers a continuous drain current (I<sub>D) of 0.5A, which allows it to handle moderate current loads with ease. Furthermore, the device boasts a low on-state resistance (R<sub>DS(on)), which minimizes power losses during operation, enhancing the efficiency of the overall system.

One of the key advantages of this Power MOSFET is its SOT-23 package, which is not only compact but also provides excellent thermal performance. The small footprint of the SOT-23 package makes the MMBFU310LT1G an ideal choice for space-constrained applications such as portable electronics, where size and power efficiency are critical considerations.

The device also features fast switching speeds, which is beneficial for applications that require high-speed switching, such as DC-DC converters, power management circuits, and load switches. This characteristic ensures that power losses during switching events are kept to a minimum, further enhancing the efficiency of the application.

ON Semiconductor has designed the MMBFU310LT1G with reliability in mind. It is characterized by its robustness against repetitive avalanche events, which ensures a long operational life even under stressful conditions. Additionally, the device is compliant with RoHS regulations, making it an environmentally friendly choice for designers looking to create green products.

In summary, the MMBFU310LT1G N-Channel Power MOSFET from ON Semiconductor is a versatile and efficient solution for a variety of power switching applications. Its low on-state resistance, fast switching speed, and compact packaging make it an excellent choice for designers who need a reliable and energy-efficient component.

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Pricing & Ordering

Quantity Unit Price Ext. Price
265+ $0.1906 $50.5090
640+ $0.1564 $100.0960
995+ $0.1515 $150.7425
1,365+ $0.1466 $200.1090
1,765+ $0.1417 $250.1005
2,365+ $0.1271 $300.5915
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 27,060 pieces
MOQ: 265 pcs
Order Increment : 1 pcs
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