ON Semiconductor MBR1100G Schottky Diode

The MBR1100G from ON Semiconductor is a robust Schottky barrier rectifier designed for high-efficiency power management applications. This diode is optimized for low forward voltage drop and high current capability, making it an ideal choice for use in switching power supplies, converters, and free-wheeling diodes in a variety of electronic devices.

Key Features

• High Surge Capacity: The MBR1100G can handle a high surge current, providing excellent robustness and reliability in demanding applications.
• Low Forward Voltage Drop: The device offers a low forward voltage drop, which reduces power losses and improves efficiency.
• High Current Capability: With its ability to support high currents, the MBR1100G is suitable for high-power applications.
• Guard Ring Die Construction: The guard ring die construction ensures stable and reliable operation by providing enhanced protection against voltage spikes and transients.

Applications

The MBR1100G is used in a wide range of applications, including:

• Switching power supplies
• DC-DC converters
• AC-DC converters
• Free-wheeling diodes in inverters
• Automotive applications
• Power management in portable devices

Technical Specifications

The MBR1100G is characterized by the following technical specifications:

• Package Type: Axial Lead
• Peak Repetitive Reverse Voltage: 100 V
• Average Rectified Forward Current: 1.0 A
• Peak Forward Surge Current: 25 A
• Operating Junction Temperature Range: -65°C to 150°C

Quality and Environmental Compliance

ON Semiconductor is committed to providing environmentally friendly solutions. The MBR1100G is RoHS compliant, ensuring that it is free from hazardous substances such as lead, making it a safer choice for both consumers and the environment.