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HUF76619D3S

Part No HUF76619D3S
Manufacturer ON Semiconductor
Catalog FETs - Single
Description 18A, 100V, 0.087 Ohm, N-Channel, Logic Level UltraFET Power MOSFET | MOSFET N-CH 100V 18A DPAK
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 100V
Id - Continuous Drain Current 18A
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Maximum) at Id, Vgs 85mOhm at 18A, 10V
Gate Source Voltage(th) (Maximum) at Id 3V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 29nC at 10V
Gate Source Voltage (Maximum) ±16V
Input Capacitance (Ciss) (Maximum) at Vds 767pF at 25V
Power Dissipation (Maximum) 75W
Temperature Range - Operating -55°C ~ 175°C
Mounting Style SMD
Supplier Device Package TO-252AA
Manufacturer Package TO-252-3, DPak (2 Leads + Tab), SC-63
Manufacturer Pack Quantity 75
MSL Level 1 (Unlimited)
Win Source Part Number 1182477-HUF76619D3S
Manufacturer Homepage www.fairchildsemi.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian HUF76619D3S CAD Model

Description

Product Overview: HUF76619D3S from ON Semiconductor

The HUF76619D3S is a robust and efficient N-Channel UltraFET Power MOSFET designed and manufactured by ON Semiconductor, a leading provider of semiconductor-based solutions. This power MOSFET is engineered to deliver high performance and reliability for a wide array of applications, including power supply, automotive, and industrial systems.

Key Features

  • High Current Capacity: The HUF76619D3S is capable of handling continuous drain currents up to 20A, making it suitable for high-power applications.
  • Low On-Resistance: With an RDS(on) value as low as 0.077 Ohms, this MOSFET ensures efficient power handling and reduced losses, contributing to energy savings in the end application.
  • High Voltage Tolerance: It features a drain-to-source voltage (VDSS) of 100V, providing a good safety margin for applications subject to voltage spikes or surges.
  • Fast Switching: The device offers fast switching performance, which is crucial for reducing switching losses and improving power efficiency in high-frequency operations.
  • Advanced Packaging: Housed in a TO-252 (DPAK) package, the HUF76619D3S is designed for compact installations and offers excellent thermal performance.

Applications

The versatility of the HUF76619D3S MOSFET allows it to be used in a variety of applications, such as:

  • DC/DC converters and DC motor drives
  • Power management in computing and telecom equipment
  • Automotive electronic systems such as engine control units and powertrain components
  • Industrial automation and control systems
  • Renewable energy systems including solar inverters and wind turbines

Quality and Reliability

ON Semiconductor is committed to the highest standards of quality and reliability, and the HUF76619D3S is no exception. It is designed to meet rigorous industry standards, ensuring long-term performance and stability in demanding conditions. With its combination of efficiency, durability, and versatility, the HUF76619D3S is an excellent choice for designers looking to optimize their power systems.

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