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HGTG18N120BN

Part No HGTG18N120BN
Manufacturer ON Semiconductor
Catalog IGBTs - Single
Description 54A, 1200V, NPT Series N-Channel IGBT | IGBT 1200V 54A 390W TO247
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Tube
IGBT Type NPT
Voltage - Collector Emitter Breakdown (Maximum) 1200V
Current - Collector (Ic) (Maximum) 54A
Current - Collector Pulsed (Icm) 165A
Vce(on) (Maximum) at Vge, Ic 2.7V at 15V, 18A
Maximum Power 390W
Switching Energy 800μJ (on), 1.8mJ (off)
Input Type Standard
Gate Charge 165nC
Td (on/off) at 25°C 23ns/170ns
Test Condition 960V, 18A, 3Ohm, 15V
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Manufacturer Package TO-247-3
Supplier Device Package TO-247-3
Manufacturer Pack Quantity 450
MSL Level 1 (Unlimited)
Win Source Part Number 1180359-HGTG18N120BN
Manufacturer Homepage www.fairchildsemi.com
Popularity Medium
Supply and Demand Status Balance
Application Field Used in Motor Drive & Control, Power Management, Industrial, Alternative Energy
Ultra Librarian 3D Model Ultra Librarian HGTG18N120BN CAD Model

Description

ON Semiconductor's HGTG18N120BN IGBT

The HGTG18N120BN is a high-performance insulated-gate bipolar transistor (IGBT) designed and manufactured by ON Semiconductor, a leader in energy-efficient innovations. This IGBT is well-suited for a wide range of power applications, particularly in motor control, inverter, and switching power supply systems. It is crafted to deliver robust performance, high efficiency, and reliability in demanding environments.

Key Features:

  • High Voltage Capability: The HGTG18N120BN is capable of supporting applications that operate at up to 1200V, making it an excellent choice for high voltage systems.
  • High Current Rating: With a continuous collector current rating of 54A at 25°C, this IGBT can handle substantial current loads, ensuring suitability for high-power applications.
  • Low On-State Voltage: The device features a low on-state voltage drop (VCE(ON)) which enhances its efficiency by minimizing conduction losses.
  • High Input Impedance: The high input impedance simplifies gate drive requirements and reduces the need for complex drive circuits.
  • Fast Switching Speed: Its fast switching capabilities reduce switching losses and improve performance in high-frequency operations.
  • Robust Temperature Performance: The HGTG18N120BN is designed to operate effectively over a wide temperature range, ensuring reliability under various environmental conditions.

Applications:

  • AC and DC motor drives
  • Uninterruptible power supplies (UPS)
  • Power factor correction (PFC) circuits
  • Induction heating systems
  • Renewable energy inverters
  • High-frequency welding

The HGTG18N120BN IGBT from ON Semiconductor is an ideal choice for designers looking for a high-voltage, high-efficiency, and reliable power transistor. Its robust construction and superior electrical characteristics ensure it can meet the rigorous demands of a broad spectrum of power electronics applications. By incorporating this IGBT into your design, you can expect improved system performance, energy savings, and long-term reliability, making it a valuable component in any power management solution.

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Pricing & Ordering

Quantity Unit Price Ext. Price
2+ $37.5377 $75.0754
4+ $30.8001 $123.2004
6+ $29.8376 $179.0256
8+ $28.8750 $231.0000
11+ $27.9126 $307.0386
14+ $25.0251 $350.3514
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 308 pieces
MOQ: 2 pcs
Order Increment : 1 pcs
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