The ON Semiconductor FQPF3N80 is a high-performance N-Channel QFET® MOSFET designed to provide exceptional power efficiency and reliability for a wide range of applications. This MOSFET features a drain-to-source voltage (V<sub>DS) of 800V, which makes it suitable for high-voltage power management tasks.
Key Features
- High Voltage Tolerance: With an 800V drain-to-source voltage, the FQPF3N80 is capable of handling high-voltage applications, making it ideal for power supply systems, lighting, and industrial applications.
- Low On-Resistance: The device offers a low on-resistance (R<sub>DS(on)), which translates to reduced conduction losses and improved efficiency in electronic circuits.
- Fast Switching Speed: The MOSFET's fast switching capabilities ensure minimal losses during the transition phases, which is crucial for high-frequency operations.
- Extended Safe Operating Area: The FQPF3N80's robust design allows for reliable operation even under harsh conditions, ensuring a wide safe operating area (SOA).
Applications
The versatility of the FQPF3N80 MOSFET allows it to be used in a variety of applications, including:
- Switch Mode Power Supplies (SMPS)
- Power Inverters
- Motor Control Systems
- High-Voltage DC/DC Converters
- Lighting Systems
- Industrial Power Management
Technical Specifications
Parameter
Value
Drain-to-Source Voltage (V<sub>DS)
800V
Continuous Drain Current (I<sub>D)
3A
Power Dissipation (P<sub>D)
125W
R<sub>DS(on)
2.5Ω
Operating Temperature Range
-55°C to +150°C
With its robust design and high-voltage capability, the ON Semiconductor FQPF3N80 MOSFET is an excellent choice for designers looking to optimize their power management systems for efficiency and reliability.
