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FQPF3N80

Part No FQPF3N80
Manufacturer ON Semiconductor
Catalog FETs - Single
Description 800V N-Channel MOSFET | MOSFET N-CH 800V 1.8A TO-220F
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 800V
Id - Continuous Drain Current 1.8A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 5Ohm at 900mA, 10V
Gate Source Voltage(th) (Maximum) at Id 5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 19nC at 10V
Gate Source Voltage (Maximum) ±30V
Input Capacitance (Ciss) (Maximum) at Vds 690pF at 25V
Power Dissipation (Maximum) 39W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package TO-220F
Manufacturer Package TO-220-3 Full Pack
Manufacturer Pack Quantity 1,000
MSL Level 1 (Unlimited)
Win Source Part Number 1175479-FQPF3N80
Manufacturer Homepage www.fairchildsemi.com
Popularity Medium
Supply and Demand Status Balance
Application Field Used in Industrial, Power Management, Lighting
Ultra Librarian 3D Model Ultra Librarian FQPF3N80 CAD Model

Description

The ON Semiconductor FQPF3N80 is a high-performance N-Channel QFET® MOSFET designed to provide exceptional power efficiency and reliability for a wide range of applications. This MOSFET features a drain-to-source voltage (VDS) of 800V, which makes it suitable for high-voltage power management tasks.

Key Features

  • High Voltage Tolerance: With an 800V drain-to-source voltage, the FQPF3N80 is capable of handling high-voltage applications, making it ideal for power supply systems, lighting, and industrial applications.
  • Low On-Resistance: The device offers a low on-resistance (RDS(on)), which translates to reduced conduction losses and improved efficiency in electronic circuits.
  • Fast Switching Speed: The MOSFET's fast switching capabilities ensure minimal losses during the transition phases, which is crucial for high-frequency operations.
  • Extended Safe Operating Area: The FQPF3N80's robust design allows for reliable operation even under harsh conditions, ensuring a wide safe operating area (SOA).

Applications

The versatility of the FQPF3N80 MOSFET allows it to be used in a variety of applications, including:

  • Switch Mode Power Supplies (SMPS)
  • Power Inverters
  • Motor Control Systems
  • High-Voltage DC/DC Converters
  • Lighting Systems
  • Industrial Power Management

Technical Specifications

Parameter Value
Drain-to-Source Voltage (VDS) 800V
Continuous Drain Current (ID) 3A
Power Dissipation (PD) 125W
RDS(on) 2.5Ω
Operating Temperature Range -55°C to +150°C

With its robust design and high-voltage capability, the ON Semiconductor FQPF3N80 MOSFET is an excellent choice for designers looking to optimize their power management systems for efficiency and reliability.

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Pricing & Ordering

Quantity Unit Price Ext. Price
170+ $0.3430 $58.3100
410+ $0.2818 $115.5380
640+ $0.2726 $174.4640
875+ $0.2645 $231.4375
1,135+ $0.2553 $289.7655
1,520+ $0.2287 $347.6240
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 8,000 pieces
MOQ: 170 pcs
Order Increment : 1 pcs
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