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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Tube
Status Obsolete
Transistor Polarity P-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 250V
Id - Continuous Drain Current 4A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 2.1Ohm at 2A, 10V
Gate Source Voltage(th) (Maximum) at Id 5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 14nC at 10V
Gate Source Voltage (Maximum) ±30V
Input Capacitance (Ciss) (Maximum) at Vds 420pF at 25V
Power Dissipation (Maximum) 75W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package TO-220-3
Manufacturer Package TO-220-3
Manufacturer Pack Quantity 1,000
MSL Level 1 (Unlimited)
Win Source Part Number 1175435-FQP4P25
Manufacturer Homepage www.fairchildsemi.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian FQP4P25 CAD Model

Description

ON Semiconductor FQP4P25 P-Channel QFET® MOSFET

The ON Semiconductor FQP4P25 is a high-performance P-Channel QFET® MOSFET designed to deliver efficient power management and conversion in a wide range of applications. This MOSFET utilizes advanced QFET® technology to provide enhanced switching performance, low on-resistance, and a high degree of reliability, making it an ideal choice for designers looking to optimize their power circuitry.

With a -250V drain-source voltage (Vdss) and a -4A continuous drain current (Id), the FQP4P25 is capable of handling significant power levels while maintaining a low threshold voltage, ensuring easy drive capability. The device's low gate charge (Qg) facilitates faster switching speeds, which is crucial for high-efficiency power supplies and DC-DC converters.

The FQP4P25 features a robust package that is engineered to minimize on-state resistance (Rds(on)) and to dissipate heat effectively. This results in improved thermal performance and reliability over a wide operating temperature range. The package is also RoHS compliant, ensuring that it meets current environmental standards by avoiding the use of hazardous substances.

Key applications for the FQP4P25 include power supply systems, motor drives, lighting systems, and other power management tasks where a P-Channel MOSFET is preferred. Its high breakdown voltage and current handling capabilities make it particularly suited for high-side switching in full-bridge or half-bridge configurations.

ON Semiconductor has a reputation for producing high-quality components that meet the rigorous demands of the electronics industry. The FQP4P25 is no exception, offering both performance and reliability. Its combination of advanced technology, thermal efficiency, and environmental compliance makes it a smart choice for designers seeking to create compact, energy-efficient power solutions.

Whether you're developing power supplies, inverter circuits, or any application requiring a dependable P-Channel MOSFET, the FQP4P25 from ON Semiconductor is a component that can help you achieve your design goals with confidence.

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