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FQP3N80

Part No FQP3N80
Manufacturer ON Semiconductor
Catalog FETs - Single
Description 800V N-Channel MOSFET | MOSFET N-CH 800V 3A TO-220
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 800V
Id - Continuous Drain Current 3A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 5Ohm at 1.5A, 10V
Gate Source Voltage(th) (Maximum) at Id 5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 19nC at 10V
Gate Source Voltage (Maximum) ±30V
Input Capacitance (Ciss) (Maximum) at Vds 690pF at 25V
Power Dissipation (Maximum) 107W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package TO-220-3
Manufacturer Package TO-220-3
Manufacturer Pack Quantity 50
MSL Level 1 (Unlimited)
Win Source Part Number 1175430-FQP3N80
Manufacturer Homepage www.fairchildsemi.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian FQP3N80 CAD Model

Description

ON Semiconductor FQP3N80 MOSFET Overview

The FQP3N80 is a high-performance MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) developed by ON Semiconductor, a leading provider of semiconductor-based solutions. This particular MOSFET is designed to meet the demands of various power switching applications across a wide range of industries.

Key Features and Benefits

  • High Voltage Capability: The FQP3N80 is capable of withstanding voltages up to 800V, making it suitable for high voltage applications such as power supplies, converters, and inverters.
  • Low On-Resistance: With a low RDS(on), this MOSFET offers reduced conduction losses, which enhances the overall efficiency of the system in which it is used.
  • Fast Switching: The device is designed for quick switching, which is essential for reducing switching losses and improving the performance in high-frequency circuits.
  • Robustness: The FQP3N80 is built to endure harsh conditions and provides reliable performance with its robust design.
  • Extended Safe Operating Area: Its safe operating area (SOA) is well-defined, ensuring safe operation under various conditions.

Applications

The versatility of the FQP3N80 MOSFET allows it to be utilized in a range of applications, including:

  • Switch Mode Power Supplies (SMPS)
  • Power Factor Correction (PFC) circuits
  • Electronic Lamp Ballasts
  • DC-DC Converters
  • Motor Control Systems

Quality and Reliability

ON Semiconductor is known for its commitment to quality and the FQP3N80 is no exception. It is manufactured to meet the highest quality standards, ensuring reliability and performance consistency. The device also complies with various environmental standards, making it a suitable choice for eco-conscious applications.

Technical Specifications

Parameter Value
Drain-to-Source Voltage (VDSS) 800V
Continuous Drain Current (ID) 3A
Power Dissipation (PD) 125W
RDS(on) 2.5Ω
Operating Temperature Range -55°C to +150°C

For detailed product specifications, datasheets, and support resources, customers are encouraged to visit ON Semiconductor's official website or contact their local sales representative.

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Pricing & Ordering

Quantity Unit Price Ext. Price
85+ $0.6861 $58.3185
210+ $0.5625 $118.1250
320+ $0.5452 $174.4640
440+ $0.5278 $232.2320
570+ $0.5105 $290.9850
760+ $0.4574 $347.6240
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 11,200 pieces
MOQ: 85 pcs
Order Increment : 1 pcs
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