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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 600V
Id - Continuous Drain Current 2.4A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 4.7Ohm at 1.2A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 11nC at 10V
Gate Source Voltage (Maximum) ±30V
Input Capacitance (Ciss) (Maximum) at Vds 350pF at 25V
Power Dissipation (Maximum) 64W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package TO-220-3
Manufacturer Package TO-220-3
Manufacturer Pack Quantity 1,000
MSL Level 1 (Unlimited)
Win Source Part Number 1175426-FQP2N60
Manufacturer Homepage www.fairchildsemi.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian FQP2N60 CAD Model

Description

ON Semiconductor FQP2N60 N-Channel QFET MOSFET Overview

The FQP2N60 from ON Semiconductor is a robust N-channel QFET® MOSFET designed to deliver high performance for a wide range of applications. This semiconductor device is engineered to provide efficient power management and control, making it an ideal choice for designers looking to optimize their electronic circuits.

Key Features

  • High Voltage Capability: The FQP2N60 operates at 600V, making it suitable for high voltage applications that require reliable switching and power regulation.
  • Low Gate Charge: With a reduced gate charge, this MOSFET enables faster switching speeds, which is essential for improving efficiency in power conversion systems.
  • Low Crss (Reverse Transfer Capacitance): The minimized reverse transfer capacitance ensures lower noise and reduced losses during switching, enhancing overall performance.
  • Rugged Design: The device is designed to withstand harsh conditions, featuring a robust package that ensures long-term reliability.

Applications

The FQP2N60 is versatile and can be used in various applications, including:

  • Switch Mode Power Supplies (SMPS)
  • Power Inverter Circuits
  • Motor Control Systems
  • High-Frequency DC-DC Converters

Technical Specifications

The key technical specifications of the FQP2N60 include:

  • Drain-Source Voltage (Vdss): 600V
  • Continuous Drain Current (Id): 2A
  • Power Dissipation (Pd): 48W
  • Gate-Source Voltage (Vgs): ±30V
  • Total Gate Charge (Qg): 6nC

Package and Quality Assurance

The FQP2N60 is available in a TO-220 package, which is widely used and recognized for its thermal and electrical performance. ON Semiconductor is committed to delivering high-quality products, and this MOSFET is no exception. It undergoes rigorous testing and quality control procedures to ensure it meets the industry standards for performance and reliability.

In summary, the FQP2N60 N-Channel QFET MOSFET from ON Semiconductor is a high-voltage, high-efficiency, and reliable component suitable for a variety of power applications. Its advanced features and robust design make it a valuable addition to any power management system.

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Pricing & Ordering

Quantity Unit Price Ext. Price
65+ $0.8217 $53.4105
150+ $0.6742 $101.1300
230+ $0.6532 $150.2360
320+ $0.6321 $202.2720
410+ $0.6110 $250.5100
550+ $0.5478 $301.2900
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
Availability: 5,000 pieces
MOQ: 65 pcs
Order Increment : 1 piece
*Need More Quantity? *Request a Bulk Quantity Quotation?

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