ON Semiconductor FQA13N80 Product Overview
The FQA13N80 from ON Semiconductor is a high-performance, 800V N-Channel QFET® MOSFET designed for a wide range of applications that require high voltage and current handling capabilities. With its robust design, this MOSFET is ideal for high-efficiency power management tasks in both consumer and industrial electronics.
Key Features
- High Voltage Capability: The FQA13N80 is capable of withstanding voltages up to 800V, making it suitable for high voltage applications such as power supplies, converters, and inverters.
- High Current Rating: With a continuous drain current (ID) of 13A, this MOSFET can handle significant power levels, contributing to the efficiency of the system it is integrated into.
- Low On-Resistance: A low RDS(on) of 0.85 Ohms minimizes on-state losses, thereby improving the overall efficiency of the application it is used in.
- Fast Switching: The device features fast switching capabilities, which is essential for reducing switching losses in high-frequency operations.
- TO-3PN Package: The FQA13N80 comes in a TO-3PN package that offers a high level of heat dissipation, ensuring stable operation under high load conditions.
Applications
- Switch Mode Power Supplies (SMPS)
- Power Inverter Systems
- PFC (Power Factor Correction) Circuits
- Uninterruptible Power Supplies (UPS)
- Motor Control Applications
Reliability and Performance
The FQA13N80 is designed to meet the stringent requirements of various electronic systems. Its robustness is complemented by an operating temperature range of -55°C to +150°C, ensuring reliable performance even in extreme conditions. Additionally, ON Semiconductor's commitment to quality means this MOSFET is manufactured with the highest standards, ensuring both reliability and longevity for the end user's application.
With its combination of high voltage and current capabilities, low on-resistance, and fast switching, the FQA13N80 from ON Semiconductor is an excellent choice for designers looking to improve the efficiency and reliability of their high-power electronic systems.
