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FOD8333R2V

Part No FOD8333R2V
Manufacturer ON Semiconductor
Catalog Isolators - Gate Drivers
Description OPTOISO 4.243KV GATE DRIVER 16SO / 3A Gate Driver Optical Coupling 4243Vrms 1 Channel 16-SO
Sample
Rohs State rohs
ECAD Module
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Category Isolators - Isolators - Gate Drivers
Mfr onsemi
Series -
Package Tape & Reel
Product Status Active
Technology Optical Coupling
Number of Channels 1
Voltage - Isolation 4243Vrms
Common Mode Transient Immunity (Min) 35kV/µs
Propagation Delay tpLH / tpHL (Max) 250ns, 250ns
Pulse Width Distortion (Max) 100ns
Rise / Fall Time (Typ) 50ns, 50ns
Current - Output High, Low 2.5A, 2.5A
Current - Peak Output 3A
Voltage - Forward (Vf) (Typ) 1.45V
Current - DC Forward (If) (Max) 25 mA
Voltage - Output Supply 3V ~ 15V
Temperature Range - Operating -40°C ~ 100°C
Mounting Type Surface Mount
Package / Case 16-SOIC (0.295", 7.50mm Width)
Supplier Device Package 16-SO
Approval Agency IEC/EN/DIN, UL
Base Product Number FOD8333
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8542.39.0001
Win Source Part Number 1356635-FOD8333R2V
Ultra Librarian 3D Model Ultra Librarian FOD8333R2V CAD Model

Description

ON Semiconductor FOD8333R2V IGBT Drive Optocoupler

The FOD8333R2V from ON Semiconductor is a high-performance, 2.5A output current IGBT drive optocoupler, specifically designed to meet the demanding requirements of driving power IGBTs and MOSFETs. This optocoupler device utilizes an aluminum gallium arsenide (AlGaAs) LED, which is optically coupled to an integrated high-speed driver circuit that features an active Miller clamp to provide a robust and efficient gate drive.

The device is housed in a compact, surface-mountable SO-16 package that offers excellent isolation properties, with an isolation voltage rating of 5kVrms for 1 minute. This makes the FOD8333R2V an ideal choice for applications where space is at a premium and electrical isolation is a necessity, such as motor drives, industrial inverters, and switching power supplies.

One of the key features of the FOD8333R2V is its high noise immunity, characterized by a common-mode rejection of 35 kV/μs at VCM = 1500V, which ensures stable operation in noisy environments. The device also boasts a wide operating temperature range of -40°C to +100°C, enabling its use in harsh industrial settings.

The FOD8333R2V provides a range of integrated protections for enhanced reliability. Its under-voltage lockout (UVLO) with hysteresis ensures that the IGBT or MOSFET is only driven when the supply voltage is sufficient, thereby protecting the semiconductor switches from malfunctioning. The active Miller clamp feature prevents unwanted gate voltage spikes during the switching transient, which is crucial for preventing false triggering of the IGBT.

Designed with efficiency in mind, the FOD8333R2V offers a minimum creepage and clearance distance of 8 mm, which meets the requirements for reinforced insulation. Additionally, the device is certified to UL1577, CSA, and IEC/EN/DIN EN 60747-5-5 regulatory standards, ensuring its safety and reliability in various applications.

Whether you are designing a new power conversion system or upgrading an existing one, the FOD8333R2V from ON Semiconductor provides the performance, reliability, and quality that engineers need to create efficient and long-lasting solutions.

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