The FM260N is a high-performance, N-channel power MOSFET designed and manufactured by ON Semiconductor, a leader in energy-efficient innovations. This MOSFET is specifically crafted to meet the rigorous demands of a wide range of electronic applications, offering a perfect blend of low on-resistance, high switching speed, and thermal efficiency. It is an ideal choice for power management tasks in both consumer and industrial electronics.
Key Features
- Low On-Resistance: The FM260N boasts an exceptionally low on-resistance, which translates to reduced conduction losses and improved overall efficiency in electronic circuits.
- High Switching Speed: This MOSFET is engineered to switch on and off rapidly, enabling high-speed operation which is crucial for applications such as switching power supplies and motor control.
- High Voltage Tolerance: With a drain-source voltage (Vdss) rating that ensures reliable operation under high voltage conditions, this MOSFET can handle the demands of a variety of power applications.
- Thermal Performance: The FM260N is designed with superior thermal characteristics, ensuring stable performance even under high temperature operating conditions.
- RoHS Compliant: Adhering to environmental standards, the FM260N is RoHS compliant, making it a responsible choice for environmentally conscious applications.
Applications
The versatility of the FM260N N-Channel Power MOSFET allows it to be used in a multitude of applications such as:
- DC/DC Converters
- Power Supply Modules
- Motor Drives
- Battery Management Systems
- Load Switches
- Power Management for Consumer Electronics
Technical Specifications
| Parameter |
Value |
| Drain-Source Voltage (Vdss) |
60V |
| Continuous Drain Current (Id) |
110A |
| Power Dissipation (Pd) |
2.5W |
| Rds(on) |
8.7 mOhms |
| Package |
TO-220 |
The FM260N from ON Semiconductor is a robust component that provides designers with a reliable and efficient solution for their power management needs. With its impressive specifications and performance, the FM260N is well-suited to power the next generation of electronic devices.