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FGHL50T65MQD

Part No FGHL50T65MQD
Manufacturer ON Semiconductor
Catalog IGBTs - Single
Description IGBT 650V 50A TO247 / IGBT Trench Field Stop 650 V 80 A 268 W Through Hole TO-247-3
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - IGBTs - Single
Manufacturer onsemi
Packaging Tube
IGBT Type Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) 650 V
Current - Collector (Ic) (Max) 80 A
Current - Collector Pulsed (Icm) 200 A
Vce(on) (Max) @ Vge, Ic 1.8V @ 15V, 50A
Power - Max 268 W
Switching Energy 1.05mJ (on), 700µJ (off)
Input Type Standard
Gate Charge 94 nC
Td (on/off) @ 25°C 23ns/120ns
Test Condition 400V, 50A, 10Ohm, 15V
Reverse Recovery Time (trr) 32 ns
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Through Hole
Case / Package TO-247-3
Supplier Device Package TO-247-3
Base Product Number FGHL50
RoHS Status ROHS3 Compliant
MSL Level Not Applicable
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Part Number 488-FGHL50T65MQD
Standard Package 450
Win Source Part Number 1324002-FGHL50T65MQD
Ultra Librarian 3D Model Ultra Librarian FGHL50T65MQD CAD Model

Description

ON Semiconductor FGHL50T65MQD IGBT

The FGHL50T65MQD is a high-performance insulated-gate bipolar transistor (IGBT) developed by ON Semiconductor, a leading provider of semiconductor-based solutions. This IGBT is designed to offer a superior combination of high efficiency, fast switching, and robust thermal performance, making it an ideal choice for a wide range of power applications.

Key Features:

  • High Current Rating: The device can handle a continuous collector current of up to 50A, making it suitable for high-power applications.
  • Low On-State Voltage: With a low VCE(sat) of typically 1.65V at IC=50A, it ensures reduced conduction losses and improved efficiency.
  • High Switching Speed: The IGBT is designed for fast switching, which is essential for reducing switching losses and improving the performance of power conversion systems.
  • Robust Thermal Management: The device features an advanced package design that enhances thermal performance and reliability, even under demanding conditions.
  • Co-Packaged Diode: It comes with an integrated fast recovery diode, which simplifies the design and reduces the component count in power circuits.

Applications:

The FGHL50T65MQD is suitable for a variety of applications, particularly those requiring high efficiency and power density. These applications include:

  • Uninterruptible Power Supplies (UPS)
  • Motor Drives
  • Power Factor Correction (PFC) circuits
  • Induction Heating
  • Renewable Energy Inverters

Product Advantages:

ON Semiconductor's FGHL50T65MQD IGBT provides designers with a reliable and efficient power switching solution. The device's high current handling capability and low on-state voltage contribute to reduced energy loss and improved overall system efficiency. Its fast switching characteristics enable higher frequency operation, which can lead to smaller and lighter system designs. Moreover, the integrated fast recovery diode helps to reduce the overall system complexity and improve reliability.

With its robust design and superior performance features, the FGHL50T65MQD IGBT from ON Semiconductor is a strong contender for engineers looking to optimize their power management systems across a range of industrial and commercial applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
25+ $2.0649 $51.6225
60+ $1.6943 $101.6580
92+ $1.6414 $151.0088
126+ $1.5884 $200.1384
163+ $1.5355 $250.2865
218+ $1.3766 $300.0988
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 23,681 pieces
MOQ: 25 pcs
Order Increment : 1 pcs
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