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FGH40T65UPD

Part No FGH40T65UPD
Manufacturer ON Semiconductor
Catalog IGBTs - Single
Description IGBT TRENCH/FS 650V 80A TO247-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Features IGBT Trench Field Stop 650 V 80 A 268 W Through Hole TO-247-3
Manufacturer ON Semiconductor
Package Tube
Part Status Obsolete
Operating Temperature Range -55°C ~ 175°C (TJ)
Mounting Through Hole
Package TO-247-3
Case / Package TO-247-3
Family Name FGH40
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Quantity per package 450
Popularity Medium
Supply and Demand Status Limited
Win Source Part Number 871760-FGH40T65UPD
Ultra Librarian 3D Model Ultra Librarian FGH40T65UPD CAD Model

Description

Introducing the FGH40T65UPD IGBT from ON Semiconductor

ON Semiconductor's FGH40T65UPD is a cutting-edge insulated gate bipolar transistor (IGBT) that is designed for a variety of power applications. This powerful semiconductor device combines the simple gate-drive characteristics of a MOSFET with the high-current and low-saturation-voltage capability of a bipolar transistor, making it an ideal choice for high-efficiency, high-speed switching applications.

Key Features

  • High Current Capability: The FGH40T65UPD is capable of handling high current levels, which makes it suitable for demanding applications that require robust power handling.
  • Low Saturation Voltage: The device has a low collector-emitter saturation voltage (VCE(sat)), reducing power losses and improving efficiency in operation.
  • High Switching Speed: With its fast switching capabilities, the FGH40T65UPD can operate at high frequencies, which is beneficial for applications such as switching power supplies and motor control.
  • Ruggedness: The device is designed to be rugged and durable, withstanding harsh conditions and providing reliable performance over time.

Applications

The versatility of the FGH40T65UPD makes it suitable for a wide range of applications, including:

  • Uninterruptible Power Supplies (UPS)
  • Power Factor Correction (PFC) circuits
  • DC-AC inverters for solar energy systems
  • Motor drives and controls
  • Induction heating systems
  • High-frequency power converters

Technical Specifications

The FGH40T65UPD boasts impressive technical specifications that ensure its performance in demanding scenarios:

  • 650V Collector-Emitter Breakdown Voltage (VBR(CE))
  • 40A Continuous Collector Current (IC) at 25°C
  • Low On-State Voltage Drop (VCE(on)) for improved efficiency
  • Co-Packaged Diode for Free-Wheeling Applications
  • Robust and High-performance TO-247 Package

By integrating the FGH40T65UPD IGBT into your power management designs, you can achieve superior performance, efficiency, and reliability. ON Semiconductor is committed to providing high-quality devices that meet the evolving needs of modern power electronics, and the FGH40T65UPD is no exception. Upgrade your systems with this advanced IGBT to take advantage of the latest in semiconductor technology.

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Pricing & Ordering

Quantity Unit Price Ext. Price
2+ $31.0094 $62.0188
5+ $25.4435 $127.2175
8+ $24.6489 $197.1912
10+ $23.8542 $238.5420
13+ $23.0584 $299.7592
17+ $20.6733 $351.4461
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 300 pieces
MOQ: 2 pcs
Order Increment : 1 pcs
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