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FGA6065ADF

Part No FGA6065ADF
Manufacturer ON Semiconductor
Catalog OEM Parts (F - I)
Description Trans IGBT Chip N-CH 650V 120A 306000mW 3-Pin(3+Tab) TO-3PN Rail
Sample
Rohs State rohs
ECAD Module
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Collector Emitter Breakdown Voltage 650 V
Collector Emitter Voltage (VCEO) 2.3 V
Element Configuration Single
Max Collector Current 120 A
Maximum Operating Temperature 175 °C
Max Power Dissipation 306 W
Min Operating Temperature -55 °C
Mount Through Hole
Number of Pins 3
Reverse Recovery Time 110 ns
RoHS Compliant
Schedule B 8541290080
Weight 6.401 g
Win Source Part Number 997588-FGA6065ADF
Categories OEM Parts(F-I)
Manufacturer ON Semiconductor
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian FGA6065ADF CAD Model

Description

Introducing the FGA6065ADF from ON Semiconductor

The FGA6065ADF is a cutting-edge IGBT (Insulated Gate Bipolar Transistor) developed by ON Semiconductor, a renowned leader in energy-efficient innovations. This device is designed to meet the high efficiency and reliability demands of modern electronic applications. With its advanced features and robust performance, the FGA6065ADF is an excellent choice for a wide range of power switching applications, including inverters, converters, and motor drives.

Optimized Performance and Efficiency

The FGA6065ADF boasts a collector-emitter voltage (VCE) of 650V, which makes it suitable for applications requiring high voltage operation. Its collector current rating of 100A ensures that it can handle substantial power levels. The device is optimized for low conduction losses and has a low saturation voltage, which translates to improved efficiency in your applications.

Enhanced Ruggedness and Reliability

ON Semiconductor has engineered the FGA6065ADF with ruggedness in mind. It features a high pulsed current capability and is designed to withstand the rigors of industrial environments. Its robustness is further reinforced with a maximum junction temperature of 175°C, allowing for reliable operation even under thermal stress.

Improved Switching Performance

Switching performance is critical in power devices, and the FGA6065ADF excels in this area. It has a fast switching speed which minimizes switching losses and improves overall efficiency. This makes the IGBT ideal for high-frequency applications where switching performance is crucial.

Easy Integration and Use

With a TO-3P package, the FGA6065ADF is easy to integrate into various circuit designs. It also offers a co-packaged freewheeling diode, which simplifies the design and reduces component count. This integration facilitates a more compact and reliable design, allowing for easier implementation and reduced time to market for your products.

Environmentally Friendly

ON Semiconductor is committed to environmental stewardship. The FGA6065ADF is manufactured with this commitment in mind, ensuring that it meets RoHS directives and is free from harmful substances. By choosing the FGA6065ADF, you are selecting a product that not only delivers performance but also supports a greener future.

In summary, the FGA6065ADF from ON Semiconductor is a high-performance IGBT that offers efficiency, ruggedness, and ease of use for a variety of power applications. Its environmentally friendly design and compliance with RoHS make it a responsible choice for manufacturers looking to create sustainable and energy-efficient products.

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Pricing & Ordering

Quantity Unit Price Ext. Price
12+ $4.8972 $58.7664
29+ $4.0182 $116.5278
45+ $3.8924 $175.1580
62+ $3.7665 $233.5230
80+ $3.6417 $291.3360
107+ $3.2652 $349.3764
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Availability: 120 pieces
MOQ: 12 pcs
Order Increment : 1 pcs
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