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FDP8442

Part No FDP8442
Manufacturer ON Semiconductor
Catalog FETs - Single
Description N-Channel PowerTrench® MOSFET 40V, 80A, 3.1mΩ | MOSFET N-CH 40V 80A TO-220AB
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 40V
Id - Continuous Drain Current 23A, 80A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 3.1mOhm at 80A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 235nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 12200pF at 25V
Power Dissipation (Maximum) 254W
Temperature Range - Operating -55°C ~ 175°C
Mounting Style Through Hole
Supplier Device Package TO-220-3
Manufacturer Package TO-220-3
Manufacturer Pack Quantity 400
MSL Level 1 (Unlimited)
Win Source Part Number 1173881-FDP8442
Manufacturer Homepage www.fairchildsemi.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian FDP8442 CAD Model

Description

The ON Semiconductor FDP8442 is a state-of-the-art PowerTrench® MOSFET designed for high-efficiency power conversion and switching applications. This robust component is engineered to deliver exceptional performance with a focus on minimizing on-state resistance (RDS(on)) and maximizing power density, which makes it an ideal choice for a wide range of industrial, computing, and telecommunication power supplies.

Featuring a maximum VDS (Drain-Source Voltage) of 40V and a maximum continuous drain current (ID) of 100A at 25°C, the FDP8442 is capable of handling high-current applications with ease. Its low gate charge (Qg) and fast switching speed enhance overall system efficiency, reducing both conduction and switching losses.

The FDP8442 utilizes ON Semiconductor's advanced PowerTrench process that encapsulates a vertical structure. This technology is tailored to decrease gate charge, providing improved switching performance without compromising on the ease of drive and ruggedness. The MOSFET's body diode exhibits low reverse recovery characteristics, which is crucial for high-speed switching operations and further contributes to the efficiency of the device.

The device is encapsulated in a TO-220 package, which is known for its excellent thermal performance and ease of mounting on a variety of heat-sinking surfaces. This package allows the FDP8442 to operate at a junction temperature range of -55°C to +175°C, ensuring reliability even under extreme conditions.

ON Semiconductor's FDP8442 is RoHS compliant and Halogen-free, reflecting the company's commitment to environmental sustainability. With its combination of high current capability, low RDS(on), and efficient switching performance, the FDP8442 is a versatile component that can significantly enhance the performance of power management systems.

Whether it's for synchronous rectification in DC/DC converters, motor drives, or power tool applications, the FDP8442 offers designers a high-performance solution that can meet the rigorous demands of modern electronic systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
30+ $1.9831 $59.4930
75+ $1.6274 $122.0550
110+ $1.5766 $173.4260
155+ $1.5258 $236.4990
200+ $1.4749 $294.9800
265+ $1.3225 $350.4625
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,000 pieces
MOQ: 30 pcs
Order Increment : 1 pcs
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