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FDMC86183

Part No FDMC86183
Manufacturer ON Semiconductor
Catalog FETs - Single
Description MOSFET N-CH 100V 47A 8PQFN / N-Channel Shielded Gate PowerTrench
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Manufacturer ON Semiconductor
Packaging Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) at 25°C 47A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Maximum) at Id, Vgs 12.8mOhm at 16A, 10V
Vgs(th) (Maximum) at Id 4V at 90μA
Gate Charge (Qg) (Maximum) at Vgs 21nC at 10V
Maximum Vgs ±20V
Input Capacitance (Ciss) (Maximum) at Vds 1515pF at 50V
Power Dissipation (Maximum) 52W (Tc)
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Supplier Device Package 8-PQFN (3.3x3.3), Power33
Manufacturer Package 8-PowerWDFN
Manufacturer Pack Quantity 3,000
MSL Level 1 (Unlimited)
Popularity Low
Supply and Demand Status Limited
Win Source Part Number 811771-FDMC86183
Ultra Librarian 3D Model Ultra Librarian FDMC86183 CAD Model

Description

Introducing the FDMC86183: A Powerhouse P-Channel PowerTrench® MOSFET

The FDMC86183 is a cutting-edge P-Channel PowerTrench® MOSFET brought to you by ON Semiconductor, a leader in energy-efficient innovations. Designed with state-of-the-art technology, this MOSFET is engineered to deliver high-performance solutions for a wide range of power management applications. With its compact footprint and exceptional energy efficiency, the FDMC86183 is an ideal choice for designers looking to enhance their systems while minimizing power losses.

Key Features and Benefits:

  • Low RDS(on): The FDMC86183 boasts an extremely low on-resistance, which translates to reduced conduction losses and improved overall efficiency in power conversion applications.
  • High Power Density: Its PowerTrench® technology allows for a high power density, ensuring that the device can handle significant power in a small package, making it perfect for space-constrained applications.
  • Thermal Management: The MOSFET's excellent thermal characteristics enable reliable performance even under high temperature operating conditions, thereby extending the life of your product.
  • Gate Charge: With its optimized gate charge, the FDMC86183 allows for faster switching speeds, which is crucial for high-frequency power switching applications.
  • ESD Protection: The device includes built-in ESD protection, safeguarding it against electrostatic discharge events and enhancing system reliability.

Applications:

The FDMC86183 is versatile and can be used in a variety of applications, including:

  • Power supply circuits
  • DC-DC converters
  • Load switches
  • Battery management systems
  • Reverse polarity protection

Whether you're designing for consumer electronics, automotive systems, or industrial equipment, the FDMC86183 from ON Semiconductor offers the performance and reliability needed to take your applications to the next level. With its advanced features and robust design, this P-Channel MOSFET is ready to meet the challenges of your most demanding power management tasks.

Choose the FDMC86183 for a high-efficiency, space-saving solution that doesn't compromise on power or performance.

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.5338 $53.6830
80+ $1.2586 $100.6880
125+ $1.2192 $152.4000
170+ $1.1799 $200.5830
220+ $1.1406 $250.9320
295+ $1.0226 $301.6670
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 70 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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