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FDMS8050

Part No FDMS8050
Manufacturer ON Semiconductor
Catalog FETs - Single
Description MOSFET N-CHANNEL 30V 55A 8PQFN
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Manufacturer ON Semiconductor
Packaging Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) at 25°C 55A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Maximum) at Id, Vgs 0.65mOhm at 55A, 10V
Vgs(th) (Maximum) at Id 3V at 750μA
Gate Charge (Qg) (Maximum) at Vgs 285nC at 10V
Maximum Vgs ±20V
Input Capacitance (Ciss) (Maximum) at Vds 22610pF at 15V
Power Dissipation (Maximum) 156W (Tc)
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Supplier Device Package 8-PQFN (5x6)
Manufacturer Package 8-PowerTDFN
Manufacturer Pack Quantity 3,000
MSL Level 1 (Unlimited)
Popularity Medium
Supply and Demand Status Balance
Win Source Part Number 805532-FDMS8050
Ultra Librarian 3D Model Ultra Librarian FDMS8050 CAD Model

Description

ON Semiconductor FDMS8050 N-Channel PowerTrench® MOSFET

The FDMS8050 is a state-of-the-art N-Channel PowerTrench® MOSFET from ON Semiconductor, designed to deliver high-efficiency power management and conversion for a wide range of applications. This advanced MOSFET technology is engineered to optimize the balance between on-resistance (R<sub>DS(on)) and gate charge (Q<sub>g), leading to improved switching performance and reduced power losses.

Constructed with ON Semiconductor's proprietary PowerTrench® process, the FDMS8050 achieves exceptional thermal performance and power density, making it an ideal choice for compact and high-performance designs. The device operates at a maximum drain-source voltage (V<sub>DSS) of 80V, which provides a comfortable margin for applications requiring high voltage handling capability.

With a continuous drain current (I<sub>D) rating of up to 100A at 25°C, the FDMS8050 can handle significant power without compromising on efficiency. Its low R<sub>DS(on) minimizes conduction losses, while the fast switching speed reduces switching losses, contributing to overall energy savings in the system.

The MOSFET's package is a Power 56, which is optimized for reduced inductance and excellent thermal characteristics. This package allows for efficient heat dissipation and robustness in high-current scenarios, ensuring long-term reliability and stability in operation. Additionally, the package is designed to be compatible with standard surface-mount technology (SMT), simplifying the manufacturing process and allowing for easier integration into various electronic assemblies.

Applications that can benefit from the features of the FDMS8050 include synchronous rectification in DC/DC converters, Point-of-Load (POL) modules, motor drives, and power supplies for computer servers, telecommunications, and networking equipment. Its performance characteristics also make it suitable for high-density power systems where space is at a premium and efficiency is paramount.

In summary, the FDMS8050 from ON Semiconductor is a high-performance N-Channel MOSFET that offers designers a combination of low on-resistance, high current capability, and fast switching speeds, all packed into a thermally efficient Power 56 package. It stands as a reliable and efficient solution for advanced power management and conversion applications.

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