The ON Semiconductor FDBL86210-F085 is a state-of-the-art N-channel PowerTrench® MOSFET designed for high-efficiency power conversion applications. This device is part of ON Semiconductor's portfolio of low-voltage, high-performance transistors that utilize their proprietary PowerTrench technology to deliver superior switching performance and low on-state resistance.

Key Features

• Low On-Resistance: The FDBL86210-F085 boasts an exceptionally low on-resistance (R_DS(on)) of just 0.85 mΩ at V_GS = 10V, which minimizes conduction losses and improves overall efficiency.
• High Current Capability: With a continuous drain current (I_D) rating of 100A, this MOSFET can handle high current loads, making it suitable for demanding power applications.
• Optimized Gate Charge: The device features an optimized gate charge (Q_g) that enhances switching performance, reducing switching losses in power conversion circuits.
• Robust Body Diode: The FDBL86210-F085 includes a robust body diode with a low reverse recovery charge (Q_rr), which is critical for high-efficiency power switching and reduces noise in fast-switching applications.

Applications

ON Semiconductor's FDBL86210-F085 MOSFET is ideal for a wide range of applications, including:

• DC/DC converters
• Power supply units for servers, telecom, and data centers
• Synchronous rectification in AC/DC power supplies
• Motor drives and inverters
• Electric vehicle (EV) charging stations
• Renewable energy systems, such as solar inverters and wind turbines

Package and Reliability

The FDBL86210-F085 is housed in a robust and compact Power56 package, which is optimized for thermal performance and space-saving on PCBs. This package is also RoHS compliant and Halogen-free, demonstrating ON Semiconductor's commitment to environmental sustainability. The device is designed to meet the rigorous standards of industrial and automotive applications, ensuring reliability and long operational life in challenging environments.