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EFC6605R-V-TR

Part No EFC6605R-V-TR
Manufacturer ON Semiconductor
Catalog FETs - Arrays
Description MOSFET N-CH DUAL 10A 24V 6XFLGA
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FET, MOSFET Arrays
Mfr ON Semiconductor
Package Tape & Reel
Product Status Active
Technology MOSFET (Metal Oxide)
Configuration 2 N-Channel
FET Feature Logic Level Gate, 2.5V Drive
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 10A (Ta)
Rds On (Max) @ Id, Vgs 13.3mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id 1.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 19.8nC @ 4.5V
Power - Max 1.6W (Ta)
Temperature Range - Operating 150°C
Mounting Type Surface Mount
Package / Case 6-SMD, No Lead
Supplier Device Package 6-EFCP (1.9x1.46)
Base Product Number EFC6605
Standard Package 5,000 pcs
MSL Level Not Applicable
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 450900-EFC6605R-V-TR
Ultra Librarian 3D Model Ultra Librarian EFC6605R-V-TR CAD Model

Description

The ON Semiconductor EFC6605R-V-TR is a high-performance, field-effect transistor (FET) that is designed for power management applications. This advanced technology component is engineered to deliver efficient power conversion and regulation, making it an ideal choice for a wide range of electronic devices and systems.

Key Features

  • Low On-Resistance: The EFC6605R-V-TR boasts an exceptionally low on-resistance, which translates to reduced power loss and improved efficiency in power conversion applications.
  • High-Speed Switching: This FET is capable of high-speed switching operations, which is critical for minimizing transition losses and enhancing the performance of power supply circuits.
  • Thermal Performance: With its superior thermal characteristics, the EFC6605R-V-TR is able to maintain stable operation even under high-temperature conditions, ensuring reliability and longevity.
  • Compact Footprint: The device comes in a compact, surface-mount package that allows for space-saving integration into modern electronic designs.

Applications

The versatility of the EFC6605R-V-TR makes it suitable for a variety of applications, including:

  • DC/DC converters
  • Power supply modules
  • Battery management systems
  • Motor control circuits
  • Load switches

Technical Specifications

The EFC6605R-V-TR offers the following technical specifications:

  • Drain-to-Source Voltage (VDS): The maximum voltage the FET can tolerate across the drain-to-source terminals.
  • Continuous Drain Current (ID): The maximum current that can flow through the drain terminal continuously.
  • Gate-to-Source Voltage (VGS): The maximum voltage that can be applied between the gate and source terminals.
  • Power Dissipation: The amount of power the FET can dissipate without exceeding its maximum operating temperature.

Quality and Reliability

ON Semiconductor is committed to delivering high-quality products. The EFC6605R-V-TR is manufactured with stringent quality control processes and is designed to meet or exceed industry standards for performance and reliability.

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Pricing & Ordering

Quantity Unit Price Ext. Price
240+ $0.2444 $58.6560
580+ $0.2007 $116.4060
895+ $0.1943 $173.8985
1,230+ $0.1880 $231.2400
1,590+ $0.1818 $289.0620
2,130+ $0.1630 $347.1900
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 7,000 pieces
MOQ: 240 pcs
Order Increment : 1 pcs
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