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EFC4618R-P-TR

Part No EFC4618R-P-TR
Manufacturer ON Semiconductor
Catalog FETs - Arrays
Description MOSFET 2N-CH EFCP1818
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FET, MOSFET Arrays
Mfr ON Semiconductor
Package Tape & Reel
Product Status Obsolete
Technology MOSFET (Metal Oxide)
Configuration 2 N-Channel (Dual) Common Drain
FET Feature Logic Level Gate, 2.5V Drive
Gate Charge (Qg) (Max) @ Vgs 25.4nC @ 4.5V
Power - Max 1.6W
Temperature Range - Operating 150°C (TJ)
Mounting Type Surface Mount
Package / Case 4-XFBGA, FCBGA
Supplier Device Package EFCP1818-4CC-037
Base Product Number EFC4618
Standard Package 5,000 pcs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 588310-EFC4618R-P-TR
Ultra Librarian 3D Model Ultra Librarian EFC4618R-P-TR CAD Model

Description

ON Semiconductor EFC4618R-P-TR: A High-Performance SiC MOSFET

The EFC4618R-P-TR from ON Semiconductor is a state-of-the-art Silicon Carbide (SiC) Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) designed for high-efficiency power conversion applications. This advanced semiconductor device is characterized by its low on-resistance, high switching speed, and robust thermal performance, making it an ideal choice for a wide range of power systems, including electric vehicles (EVs), solar inverters, and industrial power supplies.

Key Features

  • Low On-Resistance: The EFC4618R-P-TR boasts an exceptionally low on-resistance, which translates to reduced conduction losses and improved overall efficiency in power conversion systems.
  • High Switching Speed: With its fast switching capabilities, this SiC MOSFET minimizes switching losses, which is crucial for high-frequency power applications.
  • High-Temperature Operation: The device is engineered to operate reliably at high temperatures, ensuring stable performance in thermally demanding environments.
  • Robust Body Diode: The built-in body diode offers fast reverse recovery, which is beneficial for applications requiring efficient diode performance.

Applications

The versatile EFC4618R-P-TR SiC MOSFET is suitable for a variety of applications, including but not limited to:

  • Electric Vehicle (EV) Powertrain Systems
  • Solar Power Inverters
  • Uninterruptible Power Supplies (UPS)
  • Switch Mode Power Supplies (SMPS)
  • Energy Storage Systems
  • High-Performance Motor Drives

Product Specifications

The EFC4618R-P-TR is offered in a compact, surface-mount package that facilitates easy integration into various circuit designs. It features a drain-to-source voltage (VDS) of 650V, which provides ample voltage headroom for high-voltage applications. The device also has a continuous drain current (ID) rating that ensures it can handle significant power throughput without degradation.

Quality and Reliability

ON Semiconductor is known for its commitment to quality and reliability, and the EFC4618R-P-TR is no exception. It is manufactured with stringent quality control processes and is designed to meet the rigorous demands of industrial and automotive applications. Customers can trust this SiC MOSFET to deliver consistent performance and long operational life.

In summary, the EFC4618R-P-TR from ON Semiconductor is a powerful, efficient, and reliable SiC MOSFET that offers significant advantages for modern power conversion systems. Its combination of low on-resistance, high switching speed, and robust thermal performance make it a leading choice for designers looking to optimize their power systems for efficiency and reliability.

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Pricing & Ordering

Quantity Unit Price Ext. Price
205+ $0.2878 $58.9990
490+ $0.2362 $115.7380
760+ $0.2288 $173.8880
1,045+ $0.2215 $231.4675
1,350+ $0.2141 $289.0350
1,810+ $0.1920 $347.5200
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 7,000 pieces
MOQ: 205 pcs
Order Increment : 1 pcs
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