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ECH8601M-P-TL-H

Part No ECH8601M-P-TL-H
Manufacturer ON Semiconductor
Catalog FETs - Arrays
Description MOSFET 2N-CH ECH8 / Mosfet Array
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FET, MOSFET Arrays
Mfr ON Semiconductor
Package Tape & Reel
Product Status Obsolete
Base Product Number ECH8601
Standard Package 3,000 pcs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN OBSOLETE
HTSUS 0000.00.0000
Win Source Part Number 870023-ECH8601M-P-TL-H
Ultra Librarian 3D Model Ultra Librarian ECH8601M-P-TL-H CAD Model

Description

Product Overview: ECH8601M-P-TL-H

The ECH8601M-P-TL-H is a high-performance, P-Channel MOSFET brought to you by ON Semiconductor, a leader in power management and signal conditioning technology. This device is designed to cater to a wide range of applications, offering efficiency and reliability in a compact package. With its advanced features, the ECH8601M-P-TL-H is an excellent choice for designers looking to enhance power management solutions in their projects.

Key Features

  • Low On-Resistance: The MOSFET is engineered to have a very low on-resistance, which results in reduced conduction losses and improved overall efficiency in electronic circuits.
  • High-Speed Switching: It is capable of high-speed switching operations, making it suitable for high-frequency applications such as DC-DC converters and power management systems.
  • High Power Dissipation: With a substantial power dissipation capability, the ECH8601M-P-TL-H can handle higher currents without overheating, making it reliable for strenuous conditions.
  • Compact Package: The device comes in a small, leadless package that is ideal for space-constrained applications, while still providing excellent thermal performance.

Applications

The versatility of the ECH8601M-P-TL-H allows it to be used in a variety of applications, including but not limited to:

  • Power Management Systems
  • Load Switches
  • Battery Management
  • DC-DC Converters
  • Portable Devices

Technical Specifications

The ECH8601M-P-TL-H boasts an impressive set of technical specifications that ensure performance and durability:

  • Drain-Source Voltage (VDS): -30 V
  • Continuous Drain Current (ID): -6 A
  • Power Dissipation (PD): 1.25 W
  • Gate-Source Voltage (VGS): ±20 V
  • Operating Temperature Range: -55°C to 150°C

ON Semiconductor's commitment to quality ensures that the ECH8601M-P-TL-H is a reliable component for your power management needs. Whether you are designing for consumer electronics, industrial systems, or portable devices, this MOSFET provides the performance and efficiency required for modern electronic applications.

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