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DAP222M3T5G

Part No DAP222M3T5G
Manufacturer ON Semiconductor
Catalog Diodes, Rectifiers - Arrays
Description DIODE ARRAY GP 80V 100MA SOT723 / Diode Array 1 Pair Common Anode Standard 80 V 100mA (DC) Surface Mount SOT-723
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Diodes - Rectifiers - Arrays
Mfr onsemi
Package Tape & Reel
Diode Configuration 1 Pair Common Anode
Diode Type Standard
Voltage - DC Reverse (Vr) (Max) 80 V
Current - Average Rectified (Io) (per Diode) 100mA (DC)
Voltage - Forward (Vf) (Max) @ If 1.2 V @ 100 mA
Speed Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr) 4 ns
Current - Reverse Leakage @ Vr 100 nA @ 70 V
Operating Temperature - Junction 150°C (Max)
Mounting SMD (SMT)
Package / Case SOT-723
Supplier Device Package SOT-723
Base Product Number DAP222
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.10.0070
Other Names DAP222M3T5GOSDKR,DAP222M3T5GOSTR,ONSONSDAP222M3T5G,DAP222M3T5GOSCT,DAP222M3T5G-ND,2156-DAP222M3T5G-OS
Standard Package 8,000
Win Source Part Number 1055188-DAP222M3T5G
Ultra Librarian 3D Model Ultra Librarian DAP222M3T5G CAD Model

Description

Introducing the DAP222M3T5G from ON Semiconductor

The DAP222M3T5G is a state-of-the-art PNP transistor designed and manufactured by ON Semiconductor, a leader in energy-efficient innovations. This high-performance transistor is housed in a compact SOT-723 package, making it ideal for space-constrained applications. The DAP222M3T5G is engineered to provide excellent current gain and low saturation voltage, ensuring efficient operation even in the most demanding environments.

Key Features

  • Device Type: PNP Transistor
  • Package: SOT-723, a small surface-mounted package that is suitable for automated assembly processes and helps in saving valuable board space.
  • Collector-Emitter Voltage (Vceo): The transistor can handle voltages up to 50V, providing a broad operating range for various applications.
  • Collector Current (Ic): It can support a continuous collector current up to 100 mA, making it suitable for moderate power applications.
  • Power Dissipation (Pd): This device features a power dissipation of 150 mW, allowing it to handle a reasonable amount of power without overheating.
  • DC Current Gain (hFE): The DAP222M3T5G offers a high current gain, which is an essential parameter for amplification purposes in electronic circuits.
  • Low Saturation Voltage: The low Vce(sat) ensures higher efficiency by minimizing power loss during switching, making it ideal for battery-powered devices.

Applications

The DAP222M3T5G is versatile and can be used across a wide range of applications. It is particularly well-suited for:

  • Load Switching
  • Signal Processing
  • Power Management
  • Amplification Stages in Audio Devices
  • Driver Circuits in Displays and LEDs
  • Portable and Battery-powered Devices

Quality and Reliability

ON Semiconductor is committed to providing high-quality products. The DAP222M3T5G is produced under stringent quality control standards, ensuring reliability and performance consistency. This component is also RoHS compliant, reflecting ON Semiconductor's dedication to environmental sustainability and safe electronic component practices.

Whether you are designing consumer electronics, industrial systems, or automotive applications, the DAP222M3T5G offers the performance, efficiency, and reliability that designers and engineers need to create innovative solutions.

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