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CAT24C512WE-GT3

Part No CAT24C512WE-GT3
Manufacturer ON Semiconductor
Catalog Memory
Description IC EEPROM 512KBIT I2C 1MHZ 8SOIC
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Integrated Circuits (ICs) - Memory - Memory
Mfr ON Semiconductor
Package Tape & Reel
Product Status Obsolete
Programmable Not Verified
Memory Type Non-Volatile
Memory Format EEPROM
Technology EEPROM
Memory Size 512Kbit
Memory Organization 64K x 8
Memory Interface I2C
Clock Frequency 1 MHz
Write Cycle Time - Word, Page 5ms
Access Time 900 ns
Voltage - Supply 1.8V ~ 5.5V
Temperature Range - Operating -40°C ~ 125°C (TA)
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SOIC
Base Product Number CAT24C512
Standard Package 3,000 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8542.32.0051
Win Source Part Number 914706-CAT24C512WE-GT3
Ultra Librarian 3D Model Ultra Librarian CAT24C512WE-GT3 CAD Model

Description

ON Semiconductor CAT24C512WE-GT3 EEPROM

The CAT24C512WE-GT3 is a high-performance 512-Kb Serial EEPROM memory device from ON Semiconductor. This integrated circuit is designed to provide a flexible and reliable non-volatile memory solution for a wide range of applications that require data storage that is both durable and retrievable even after power-off scenarios.

This EEPROM device operates with a supply voltage range of 2.5V to 5.5V, making it suitable for many low-power and standard applications. It utilizes the popular I²C (Inter-Integrated Circuit) interface, providing a simple two-wire serial interface for communication. This allows for easy integration into various microcontroller-based systems, where it can share the bus with other I²C-compatible devices.

The CAT24C512WE-GT3 offers a substantial amount of storage space, with a 64-byte page write buffer that makes it ideal for storing configuration settings, calibration data, or small application logs. The device's memory is organized as 65,536 words of 8 bits each, which can be accessed in a random-access manner, providing flexibility and efficiency in data retrieval and storage.

ON Semiconductor has designed this EEPROM with reliability in mind. It is rated for a write endurance of 1 million write cycles and a data retention period of 100 years, ensuring that data remains safe and intact over a long period. Additionally, the device features a hardware write protection pin, which can be used to prevent unintended writes to the memory, thus safeguarding the stored data.

The CAT24C512WE-GT3 is available in a TSSOP package, which is ideal for space-constrained applications. Its wide operating temperature range of -40°C to +85°C makes it suitable for use in various environments, from industrial to commercial applications. Whether it's used in consumer electronics, automotive systems, or industrial control units, the CAT24C512WE-GT3 from ON Semiconductor is an excellent choice for designers looking for a dependable and easy-to-use memory solution.

For more technical details, datasheets, and support resources, visit ON Semiconductor's official website or contact your local sales representative.

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Pricing & Ordering

Quantity Unit Price Ext. Price
65+ $0.9013 $58.5845
160+ $0.7396 $118.3360
245+ $0.7165 $175.5425
335+ $0.6934 $232.2890
435+ $0.6703 $291.5805
580+ $0.6010 $348.5800
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Prices are subject to market and will be confirmed after the order is placed.
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,080 pieces
MOQ: 65 pcs
Order Increment : 1 pcs
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