Product Overview: CAT24C05YI-GT3 EEPROM from ON Semiconductor

The CAT24C05YI-GT3 is a high-performance EEPROM (Electrically Erasable Programmable Read-Only Memory) device from ON Semiconductor, designed for a wide array of applications requiring reliable and flexible non-volatile memory storage. With a storage capacity of 512 x 8 bits, this EEPROM offers ample space for storing configuration settings, calibration data, and small application code.

Key Features

• Memory Size: The CAT24C05YI-GT3 provides 4 Kb (512 bytes) of memory, organized as 512 x 8 bits, suitable for a variety of data storage needs.
• Interface: It utilizes a standard I²C serial interface, facilitating easy integration into most microcontroller-based systems and ensuring compatibility with a broad range of devices.
• Operating Voltage: The device operates within a range of 1.8V to 5.5V, making it versatile for use in both low-voltage and standard applications.
• Temperature Range: Designed for robust performance, the CAT24C05YI-GT3 is rated for an industrial temperature range of -40°C to +85°C, ensuring reliable operation under extreme conditions.
• Write Cycle Time: It boasts a fast write cycle time of 5 ms (typical), enabling efficient data handling and quick updates to stored information.
• Endurance: The EEPROM is capable of 1 million write cycles, providing long-term reliability and data retention for critical applications.
• Data Retention: With a data retention period of 100 years, this device ensures that data remains secure and intact over an extended period.
• Packaging: The CAT24C05YI-GT3 is available in a compact, RoHS-compliant TSSOP-8 package, ideal for space-constrained applications.

Applications

The CAT24C05YI-GT3 is suitable for a variety of applications including:

• Consumer electronics
• Automotive systems
• Industrial control systems
• Medical devices
• Smart cards
• Portable devices

ON Semiconductor's commitment to quality and performance is evident in the CAT24C05YI-GT3, making it a reliable choice for designers and engineers seeking a memory solution that offers both durability and flexibility.