Product Overview: CAT24C02WI-GT3JN

The CAT24C02WI-GT3JN is a high-quality EEPROM (Electrically Erasable Programmable Read-Only Memory) device from ON Semiconductor, renowned for its reliability and performance in a wide range of applications. This EEPROM chip is part of the serial I²C bus memory family and boasts a 2-Kb (256 x 8) memory size, making it suitable for storing small amounts of data that must be preserved during power-off scenarios.

Key Features

• Memory Size: 2-Kb (256 x 8) provides sufficient space for configuration data, device parameters, or small application data storage.
• Interface: I²C (Inter-Integrated Circuit) serial interface ensures easy integration with a wide variety of microcontrollers and processors.
• Operating Voltage: The device operates at a voltage range of 2.5V to 5.5V, making it versatile for both low-power and standard applications.
• Write Cycle Time: Fast write cycle times of 5 ms max facilitate efficient data management and quick updates to stored information.
• Operating Temperature: Designed to function in a broad temperature range from -40°C to +85°C, ensuring reliability in harsh conditions.
• Packaging: Available in a compact 8-pin SOIC package, the CAT24C02WI-GT3JN is suitable for space-constrained applications.

Applications

The CAT24C02WI-GT3JN is ideal for a multitude of applications where a small, non-volatile memory is required. This includes:

• Consumer electronics
• Automotive systems
• Industrial controls
• Medical devices
• Smart cards
• Portable devices

Quality and Support

ON Semiconductor is committed to providing high-quality semiconductor products and services. The CAT24C02WI-GT3JN is backed by ON Semiconductor's rigorous testing and reliability standards. Customers can also access technical support and design resources to assist with their implementation and use of this EEPROM device.

Whether you're developing the next innovative electronic device or looking to enhance an existing system, the CAT24C02WI-GT3JN from ON Semiconductor offers the performance, durability, and flexibility needed to meet your non-volatile memory requirements.