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2SK4088LS-1E

Part No 2SK4088LS-1E
Manufacturer ON Semiconductor
Catalog FETs - Single
Description N-Channel Power MOSFET | MOSFET N-CH 650V 11A
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 650V
Id - Continuous Drain Current 7.5A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 850mOhm at 5.5A, 10V
Gate Charge (Qg) (Maximum) at Vgs 37.6nC at 10V
Gate Source Voltage (Maximum) ±30V
Input Capacitance (Ciss) (Maximum) at Vds 1000pF at 30V
Power Dissipation (Maximum) 2W, 37W
Temperature Range - Operating 150°C
Mounting Style Through Hole
Supplier Device Package TO-220F-3FS
Manufacturer Package TO-220-3 Full Pack
Manufacturer Pack Quantity 50
MSL Level 1 (Unlimited)
Win Source Part Number 1127760-2SK4088LS-1E
Manufacturer Homepage www.onsemi.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian 2SK4088LS-1E CAD Model

Description

ON Semiconductor 2SK4088LS-1E MOSFET

The 2SK4088LS-1E is a high-performance N-channel power MOSFET brought to you by ON Semiconductor, a company renowned for its innovative and energy-efficient semiconductor solutions. This particular MOSFET is designed to meet the demanding requirements of modern electronic circuits, providing efficient power management and switching with low on-state resistance.

With its advanced silicon technology, the 2SK4088LS-1E offers exceptional performance characteristics that make it suitable for a wide range of applications. It is commonly used in power supplies, DC-DC converters, motor drives, and other power-intensive applications where efficient energy control is necessary.

Key Features

  • Low On-Resistance: The device boasts an extremely low on-resistance (RDS(on)), which minimizes conduction losses and improves overall efficiency.
  • High-Speed Switching: It is capable of high-speed switching, which is essential for reducing switching losses and improving performance in high-frequency applications.
  • High Drain-Source Voltage: With a high drain-source voltage (VDSS), it can handle the requirements of circuits that operate at higher voltages.
  • Gate Charge Optimization: The optimized gate charge (QG) reduces the power required to drive the MOSFET, resulting in lower switching losses and better power efficiency.

Applications

  • Switch Mode Power Supplies (SMPS)
  • DC-DC Converters
  • Power Inverters
  • Motor Control Circuits
  • High-Efficiency Power Management Systems

The 2SK4088LS-1E is packaged in a TO-220FL package, which is known for its robustness and excellent thermal performance. This package ensures that the MOSFET can handle high levels of power without compromising the integrity of the device, even in challenging thermal environments.

ON Semiconductor's commitment to quality and performance is evident in the 2SK4088LS-1E MOSFET. It is a testament to their dedication to providing components that enable energy-efficient power management in a variety of electronic systems. Whether you're designing for industrial, commercial, or high-tech applications, the 2SK4088LS-1E is an excellent choice for reliable and efficient power switching.

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Pricing & Ordering

Quantity Unit Price Ext. Price
30+ $2.1335 $64.0050
70+ $1.7507 $122.5490
105+ $1.6959 $178.0695
145+ $1.6413 $237.9885
185+ $1.5865 $293.5025
245+ $1.4224 $348.4880
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 7,000 pieces
MOQ: 30 pcs
Order Increment : 1 pcs
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