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2SK2623-TL

Part No 2SK2623-TL
Manufacturer ON Semiconductor
Catalog JFETs (Junction Field Effect)
Sample
Rohs State Need to verify
ECAD Module
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Category Discrete Semiconductor Products
Family JFETs(Junction Field Effect)
Manufacturer ON Semiconductor
Win Source Part Number 159555-2SK2623-TL
Popularity Low
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian 2SK2623-TL CAD Model

Description

The 2SK2623-TL from ON Semiconductor is a robust N-Channel MOSFET designed to deliver high efficiency and performance for a wide range of applications. This power MOSFET is a testament to ON Semiconductor's commitment to providing innovative solutions that meet the evolving needs of the electronics industry.

Key Features

  • High-Speed Switching: The 2SK2623-TL is optimized for fast switching speeds, making it ideal for high-frequency applications.
  • Low On-Resistance: With its low RDS(on), this MOSFET minimizes conduction losses, thus improving overall efficiency.
  • High Drain-Source Voltage: It supports a drain-source voltage (VDSS) of up to 900V, suitable for high-voltage applications.
  • High Current Capacity: The device can handle continuous drain currents (ID) up to a significant level, supporting applications with high current demands.
  • Enhanced Durability: Built to withstand tough conditions, the 2SK2623-TL offers excellent ruggedness and reliability.

Applications

The versatile nature of the 2SK2623-TL MOSFET makes it suitable for a variety of applications, including:

  • Power supplies
  • DC-DC converters
  • Motor drives
  • Inverters
  • Lighting systems
  • Industrial equipment

Product Specifications

Parameter Value
Configuration Single
Channel Type N-Channel
VDSS (Drain-Source Breakdown Voltage) 900V
RDS(on) (Static Drain-Source On-Resistance) Low
ID (Continuous Drain Current) High
Package / Case TO-252 (DPAK)

With its robust design and superior performance, the 2SK2623-TL from ON Semiconductor is an excellent choice for designers looking to enhance the efficiency and reliability of their power management systems.

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