ON Semiconductor 2SK2168-TD-E MOSFET
The ON Semiconductor 2SK2168-TD-E is a high-performance N-Channel MOSFET designed for a variety of applications that require efficient power management and high-speed switching. This device is part of ON Semiconductor's extensive portfolio of metal-oxide-semiconductor field-effect transistors (MOSFETs), which are known for their reliability and efficiency in power conversion and management tasks.
Key Features
- Low On-Resistance: The 2SK2168-TD-E features a low on-resistance, which minimizes conduction losses and improves overall efficiency in applications.
- High-Speed Switching: With its ability to switch at high speeds, this MOSFET is suitable for high-frequency applications, reducing switching losses and improving performance.
- High Drain-Source Voltage: The device supports a high drain-source voltage (V<sub>DS), allowing it to handle higher voltage applications with ease.
- Enhanced Thermal Performance: The MOSFET is designed with an improved thermal profile, ensuring better heat dissipation and reliability under varying operating conditions.
- Low Gate Charge: A low gate charge (Q<sub>G) reduces the power required to switch the device, which is beneficial for power-sensitive designs.
Applications
The 2SK2168-TD-E is ideal for a wide range of applications, including:
- Power supplies
- DC-DC converters
- Motor drives
- Switching regulators
- Power management systems
Product Specifications
Parameter
Value
Configuration
Single
Channel Type
N-Channel
Drain-Source Voltage (V<sub>DS)
High
Current - Continuous Drain (I<sub>D) @ 25°C
Specified in datasheet
R<sub>DS(on) - at V<sub>GS
Low
Gate Charge (Q<sub>G)
Low
The 2SK2168-TD-E from ON Semiconductor is a robust and versatile N-Channel MOSFET that delivers high efficiency and performance for a variety of demanding applications. Its combination of low on-resistance, high-speed switching, and excellent thermal characteristics make it a preferred choice for designers looking to optimize their power management solutions.
