ON Semiconductor 2SK2168-TD-E MOSFET

The ON Semiconductor 2SK2168-TD-E is a high-performance N-Channel MOSFET designed for a variety of applications that require efficient power management and high-speed switching. This device is part of ON Semiconductor's extensive portfolio of metal-oxide-semiconductor field-effect transistors (MOSFETs), which are known for their reliability and efficiency in power conversion and management tasks.

Key Features

• Low On-Resistance: The 2SK2168-TD-E features a low on-resistance, which minimizes conduction losses and improves overall efficiency in applications.
• High-Speed Switching: With its ability to switch at high speeds, this MOSFET is suitable for high-frequency applications, reducing switching losses and improving performance.
• High Drain-Source Voltage: The device supports a high drain-source voltage (V<sub>DS), allowing it to handle higher voltage applications with ease.
• Enhanced Thermal Performance: The MOSFET is designed with an improved thermal profile, ensuring better heat dissipation and reliability under varying operating conditions.
• Low Gate Charge: A low gate charge (Q<sub>G) reduces the power required to switch the device, which is beneficial for power-sensitive designs.

Applications

The 2SK2168-TD-E is ideal for a wide range of applications, including:

• Power supplies
• DC-DC converters
• Motor drives
• Switching regulators
• Power management systems

Product Specifications

Parameter Value Configuration Single Channel Type N-Channel Drain-Source Voltage (V<sub>DS) High Current - Continuous Drain (I<sub>D) @ 25°C Specified in datasheet R<sub>DS(on) - at V<sub>GS Low Gate Charge (Q<sub>G) Low

The 2SK2168-TD-E from ON Semiconductor is a robust and versatile N-Channel MOSFET that delivers high efficiency and performance for a variety of demanding applications. Its combination of low on-resistance, high-speed switching, and excellent thermal characteristics make it a preferred choice for designers looking to optimize their power management solutions.