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2SJ580-TD

Part No 2SJ580-TD
Manufacturer ON Semiconductor
Catalog JFETs (Junction Field Effect)
Sample
Rohs State Need to verify
ECAD Module
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Category Discrete Semiconductor Products
Family JFETs(Junction Field Effect)
Manufacturer ON Semiconductor
Win Source Part Number 158747-2SJ580-TD
Popularity Low
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian 2SJ580-TD CAD Model

Description

The ON Semiconductor 2SJ580-TD is a high-performance P-Channel MOSFET that offers a compact and efficient solution for a wide range of power management applications. This MOSFET is designed to deliver low on-resistance and high switching performance, making it an ideal choice for designers looking to enhance energy efficiency in their designs.

Key Features:

  • Low On-Resistance: The 2SJ580-TD features a very low on-state resistance, which minimizes conduction losses and improves overall efficiency.
  • High-Speed Switching: With its fast switching capabilities, this MOSFET is suitable for high-frequency power switching applications, contributing to reduced switching losses.
  • P-Channel Device: As a P-Channel device, it facilitates simpler drive circuitry compared to N-Channel MOSFETs, especially in high-side switch configurations.
  • Surface-Mount Package: The device comes in a compact surface-mount package, which is ideal for space-constrained applications.
  • High Reliability: ON Semiconductor's commitment to quality ensures that the 2SJ580-TD MOSFET meets the high reliability standards required for industrial and commercial applications.

Applications:

  • Power Supply Circuits
  • DC/DC Converters
  • Motor Control Systems
  • Load Switching
  • Battery Management Systems

The 2SJ580-TD is designed to handle significant power levels and is commonly used in applications that require efficient power distribution and regulation. Its robust construction and ON Semiconductor's manufacturing expertise make it a reliable component for any power electronic system.

Technical Specifications:

Parameter Value
Drain-Source Voltage (VDS) -60V
Continuous Drain Current (ID) -5A
Power Dissipation (PD) 2W
RDS(on) 0.077Ω

Overall, the ON Semiconductor 2SJ580-TD MOSFET stands out for its efficiency and reliability, providing an excellent choice for engineers and designers looking to optimize their power management systems.

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