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2SJ400-DL-E

Part No 2SJ400-DL-E
Manufacturer ON Semiconductor
Catalog JFETs (Junction Field Effect)
Description Trans MOSFET P-CH Si 30V 35A 3-Pin(2+Tab) SMP-FD
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products
Family JFETs(Junction Field Effect)
Manufacturer ON Semiconductor
Win Source Part Number 158613-2SJ400-DL-E
Popularity Low
Supply and Demand Status Balance
Family Name 2SJ400
ECCN EAR99
Halogen Free Compliant
Estimated EOL Date 2023
Ultra Librarian 3D Model Ultra Librarian 2SJ400-DL-E CAD Model

Description

The ON Semiconductor 2SJ400-DL-E is a high-performance P-Channel MOSFET designed to deliver efficient power management and control in a wide range of applications. This MOSFET utilizes advanced technology to provide low on-resistance, high switching speeds, and excellent thermal performance, making it an ideal choice for power conversion and regulation tasks.

Key Features

  • Low On-Resistance: The 2SJ400-DL-E MOSFET boasts a very low on-resistance, which minimizes conduction losses and enhances overall efficiency. This feature is particularly beneficial in applications where power conservation is critical.
  • High-Speed Switching: Designed for fast switching applications, this MOSFET offers rapid transition times, reducing switching losses and improving performance in high-frequency circuits.
  • High Power Dissipation: With its exceptional thermal characteristics, the 2SJ400-DL-E can handle high levels of power dissipation, making it suitable for demanding environments and heavy-duty operations.
  • P-Channel Device: As a P-Channel device, it simplifies the drive circuitry in high-side switch configurations due to its ability to be directly driven by positive gate voltages.

Applications

The versatility of the 2SJ400-DL-E allows it to be used in a variety of applications, including:

  • Power Supply Circuits
  • DC/DC Converters
  • Motor Control Systems
  • Load Switching
  • Battery Management Systems
  • Energy Storage Systems

Product Specifications

Parameter Value
Drain-Source Voltage (VDS) -60 V
Continuous Drain Current (ID) -7 A
Power Dissipation (PD) 1.5 W
Operating Temperature Range -55°C to +150°C

Overall, the ON Semiconductor 2SJ400-DL-E P-Channel MOSFET is a robust and reliable component that offers superior performance for a wide range of electronic designs. Its combination of low on-resistance, high-speed switching, and excellent thermal properties make it a go-to choice for designers looking to optimize their power management systems.

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