The 2SC2757-T33 from ON Semiconductor is a high-performance NPN bipolar junction transistor (BJT) designed for use in a wide array of electronic applications. This versatile component is well-suited for switching and amplification purposes, offering a blend of low power consumption and high efficiency that makes it an ideal choice for modern electronic circuits.
Key Features
- High Current Gain Bandwidth Product: The 2SC2757-T33 boasts a high transition frequency, making it suitable for applications requiring fast switching and high-frequency operation.
- Low Saturation Voltage: This transistor operates with a low collector-emitter saturation voltage, which reduces power dissipation and improves overall efficiency.
- High Reliability: Manufactured by ON Semiconductor, a leader in the industry, the 2SC2757-T33 is built to last and perform reliably even under challenging conditions.
- Compact SOT-23 Package: The small surface-mount package is designed for optimal space-saving on PCBs, making it a great choice for compact electronic designs.
Applications
The 2SC2757-T33 is suitable for a vast range of applications, including but not limited to:
- Audio amplifiers and pre-amplifiers
- Signal processing
- Switching regulators
- Driver stages in hi-fi systems and TVs
- Power management in portable devices
Technical Specifications
| Parameter |
Value |
| Collector-Emitter Voltage (Vceo) |
20V |
| Collector-Base Voltage (Vcbo) |
30V |
| Emitter-Base Voltage (Vebo) |
5V |
| Collector Current (Ic) |
500mA |
| Power Dissipation (Pd) |
150mW |
| DC Current Gain (hFE) |
100 to 320 |
| Transition Frequency (fT) |
250MHz |
With its robust construction, the 2SC2757-T33 from ON Semiconductor delivers consistent performance and is an excellent choice for designers looking to enhance the efficiency and reliability of their electronic products.